Electronic, magnetic and transport properties of Co2TiZ (Z=Si, Ge and Sn): A first-principle study

Sharma, Vinit; Solanki, A. K.; Kashyap, Arti

doi:10.1016/j.jmmm.2010.05.006

Cited by 101 publications

(25 citation statements)

References 33 publications

(49 reference statements)

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“…Our results shown in Fig. 2, again in very good agreement with those obtained by other authors, 15,36 further evidence that the 3d states of Ti (red/light gray lines) are almost completely empty and that the spin magnetic moment of 2 µ B found in these systems stems exclusively from the two Co atoms (dashed blue/dark gray lines). We have performed a series of calculations with a stepwise increase of the Fermi smearing to mimic the increase of the electronic temperature.…”

Section: Ground State Properties Of Bulk Co2tisi and Co2tigesupporting

confidence: 92%

“…47 For example, the quantity Our results for the effective Seebeck coefficient of the L2 1 Co 2 TiZ Heusler alloys agree well with previous calculations based on the bulk electronic structure. 15,36 Under epitaxial conditions, we note that a change in S(T ) occurs for Co 2 TiGe, Fig. 11(a), right panel, but not for for Co 2 TiSi, Fig.…”

Section: B Transport Properties Of Cubic Versus Epitaxially Strainedmentioning

confidence: 86%

“…11,15,35,36 We refer the reader in particular to the systematic study presented by Barth et al 15 which combines fullpotential LAPW-based theoretical investigations with various experimental observations and provides an exhaustive overview of the various properties of the Co 2 TiZ system. We use their all-electron results to assess the quality of our pseudopotential approach.…”

Section: Ground State Properties Of Bulk Co2tisi and Co2tigementioning

confidence: 99%

“…Adopting a Bravais lattice of the same symmetry has the advantage of dealing with identical folding of the bands, which allows one to directly isolate those changes that are solely due to the biaxial strain. Further comparison with band structure literature data 15,36 is possible, but demanding.…”

Section: B Free Standing Epitaxial Heusler Alloys On Al(001)mentioning

confidence: 99%

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Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

2014

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The feasibility of thermally driven spin injectors built from half-metallic Heusler alloys inserted between aluminum leads was investigated by means of ab initio calculations of the thermodynamic stability and electronic transport. We have focused on two main issues and found that: (i) the interface between Al and the closely lattice-matched Heusler alloys of type Co2TiZ (Z = Si or Ge) is stable under various growth conditions; and (ii) the conventional and spin-dependent Seebeck coefficients in such heterojunctions exhibit a strong dependence on both the spacer and the atomic composition of the Al/Heusler interface. The latter quantity gives a measure of the spin accumulation and varies between +8 µV/K and −3 µV/K near 300 K, depending on whether a Ti-Ge or a Co-Co plane makes the contact between Al and Co2TiGe in the trilayer. Our results show that it is in principle possible to tailor the spincaloric effects by a targeted growth control of the samples.

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Section: Ground State Properties Of Bulk Co2tisi and Co2tigesupporting

confidence: 92%

Section: B Transport Properties Of Cubic Versus Epitaxially Strainedmentioning

confidence: 86%

Section: Ground State Properties Of Bulk Co2tisi and Co2tigementioning

confidence: 99%

Section: B Free Standing Epitaxial Heusler Alloys On Al(001)mentioning

confidence: 99%

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Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

2014

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“…Since S is a measure of the voltage produced by a temperature gradient in the material, linear temperature dependence at low temperature is a signature of a potential promise for thermoelectric device applications. 54 Experimental data of the Seebeck coefficient are available only for x=0.0 between -120 and -130 µV/K at room temperature. Our result of -150 µV/K at 300 K is in good agreement with the experimental data.…”

Section: B Optical and Transport Propertiesmentioning

confidence: 99%

Electronic, optical, and thermoelectric properties of Fe2+xV1−xAl

P.¹,

Sandeep

Shankar

et al. 2017

AIP Advances

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We report the electronic, optical, and thermoelectric properties of full-Heusler alloy Fe2VAl with Fe antisite doping (Fe2+xV1−xAl) as obtained from the first-principles Tran-Blaha modified Becke-Johnson potential. The results are discussed in relation to the available experimental data and show good agreements for the band gap, magnetic moment, and optical spectra. Exploring our transport data for thermoelectric applicability suggest that Fe2+xV1−xAl is a good candidate with a high figure of merit (ZT) 0.75(0.65) for x = 0.25(0.50) at room temperature.

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Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co₂TiGe Thin Films

Dyck

Becker

Koo

et al. 2020

Physica Status Solidi (b)

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Herein, sputter‐deposited ferromagnetic Weyl semimetal (WSM) and full‐Heusler compound Co2TiGe is investigated. Crystal quality is analyzed using X‐ray diffraction and reflectivity. In addition, temperature‐dependent transport and magnetization measurements are carried out. The sample shows indications on the formation of L21 crystal structure. Magnetization measurements show a saturation magnetization of 1.98 μB (f.u.)−1 and 1.45 μB (f.u.)−1 at 50 and 300 K, respectively. This is in close agreement to the calculated value of 2 μB (f.u.)−1 at 0 K using the Slater–Pauling rule. The obtained Curie temperature is 378.5 K, which is close to prior results for bulk samples. The residual resistivity of 142.7 μΩ cm is mainly dominated by disorder scattering. At temperatures above 60 K, the Coulomb interaction dominates the resistance. The residual resistance ratio is around 1.49. Hall measurements show positive ordinary Hall and anomalous Hall constants and a positive dependence on temperature. Skew scattering and side jumps or intrinsic mechanisms contribute in similar amounts to the anomalous Hall resistivity, which indicates a higher than usual intrinsic contribution, which is expected for WSMs. The expected relation between the longitudinal and the anomalous Hall conductivity of is not met.

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Electronic, magnetic and transport properties of Co2TiZ (Z=Si, Ge and Sn): A first-principle study

Cited by 101 publications

References 33 publications

Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

Electronic, optical, and thermoelectric properties of Fe2+xV1−xAl

Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co₂TiGe Thin Films

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Electronic, magnetic and transport properties of Co2TiZ (Z=Si, Ge and Sn): A first-principle study

Cited by 101 publications

References 33 publications

Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

Interplay of growth mode and thermally induced spin accumulation in epitaxialAl/Co2TiSi/AlandAl/Co2TiGe/Alcontacts

Electronic, optical, and thermoelectric properties of Fe2+xV1−xAl

Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co2TiGe Thin Films

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Product

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Anomalous Hall Effect and Magnetoresistance in Sputter‐Deposited Magnetic Weyl Semimetal Co₂TiGe Thin Films