Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN

Reddy, V. Rajagopal; Janardhanam, V.; Ju, Jin‐Woo; Yun, Hyung-Joong; Choi, Chel‐Jong

doi:10.1016/j.ssc.2013.11.011

Cited by 13 publications

(6 citation statements)

References 35 publications

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“…Usually, ion irradiation decreases the carrier mobility and carrier concentration and enhances the series resistance, which was also observed in the C-V analysis. MEI irradiation introduced a significant number of displacements and vacancies, which was also validated by the SRIM and TRIM calculations, and these defects increased the series resistance by decreasing the minority carrier [55]. Ionization and displacement damage profile simulations showed that the displacement damage was dominant in the bulk GaN.…”

Section: Discussionmentioning

confidence: 54%

“…At higher voltages (region IV), the values of slope tend to decrease as devices approach the "trap-filled limit". This is a result of the strong electron injection; the electrons escape from the traps, which add to "space-charge-limited current (SCLC)" [55,56]. Obviously, at high voltages it reaches a trap-filled state and current conduction can be Here we can observe that logI vs. logV plot has four linear regions corresponding to low voltage region (I), intermediate voltage region (II and III), and high voltage region (IV) with different slopes given in Table 4, which shows the presence of various conduction mechanisms whereas the values of slope are found to be 1.48 (region I), 4.19 (region II), 10.76 (region III), and 2.18 (region IV) for the Ni/Pd/n-GaN SBDs, respectively.…”

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

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Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

et al. 2020

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The irradiation effects of carbon and nitrogen medium energy ions (MEI) on charge transport, structural and optical properties of Ni/Pd/n-GaN Schottky barrier diodes are reported. The devices are exposed to 600 keV C2+ and 650 keV N2+ ions in the fluence range of 1 × 1013 to 1 × 1015 ions cm−2. The SRIM/TRIM simulations provide quantitative estimations of damage created along the trajectories of ion beams in the device profile. The electrical parameters like Schottky barrier height, series resistance of the Ni/Pd/n-GaN Schottky barrier diodes decreases for a fluence of 1 × 1013 ions cm−2 and thereafter increases with an increase in fluence of 600 keV C2+ and 650 keV N2+ ions. The charge transport mechanism is influenced by various current transport mechanisms along with thermionic emission. Photoluminescence studies have demonstrated the presence of yellow luminescence in the pristine samples. It disappears at higher fluences due to the possible occupancy of Ga vacancies. The presence of the green luminescence band may be attributed to the dislocation caused by the combination of gallium vacancy clusters and impurities due to MEI irradiation. Furthermore, X-ray diffraction studies reveal that there is a decrease in the intensity and shift in the diffraction peaks towards the lower side of two thetas. The reductions in the intensity of C2+ ion irradiation is more when compared to N2+ ion irradiation, which may be attributed to change in the mean atomic scattering factor on a given site for light C2+ ion as compared to N2+ ion.

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Section: Discussionmentioning

confidence: 54%

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

Section: Current-voltage (I-v) Characteristicsmentioning

confidence: 99%

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Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

et al. 2020

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“…6. The reverse current through the diode when dominated by Poole-Frenkel effect can be expressed as [30][31][32] …”

Section: Resultsmentioning

confidence: 99%

“…The plots of I R /E versus E 1/2 and I R /T 2 versus E 1/2 produce a linear curve, and their slope is given by [32] S ¼ q nkT respectively. The values of slopes estimated from the plots of I R /E versus E 1/2 and I R /T 2 versus E 1/2 (Fig.…”

Section: Resultsmentioning

confidence: 99%

Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

et al. 2015

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We have investigated the electrical properties and current transport mechanisms of W/p-InP Schottky diode using current-voltage (I-V), capacitance-voltage-frequency (C-V-f) and conductance-frequency (G-f) techniques at room temperature. The W/p-InP Schottky diode exhibits a good rectifying behavior. Measurements show that the Schottky barrier height (SBH) and ideality factor of the W/p-InP Schottky diode are 0.84 eV (I-V)/0.98 eV (C-V) and 1.24, respectively. Also, the SBH and series resistance R s of the diode are extracted by Cheung's functions and the values are in good agreement with each other. Ohmic and space charge-limited conduction mechanisms are found to govern the current flow in the W/p-InP Schottky diode at low and high forward bias conditions, respectively. Experimental results reveal that the Poole-Frenkel mechanism is found to be dominant in the reverse bias region of W/p-InP Schottky diode. Further, the interface state density N ss and their relaxation times s of the W/p-InP Schottky diode are estimated from the forward bias C-f and G-f characteristics and the values are in the range from 1.95 9 10 13 eV -1 cm -2 and 3.38 9 10 -5 s at (0.81-E V ) eV to 1.78 9 10 13 eV -1 cm -2 and 2.78 9 10 -6 s at (0.30-E V ) eV, respectively. Both the N ss and s show an exponential rise with bias from the top of the valance band toward the mid gap.

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Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

2017

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Electronic parameters and carrier transport mechanism of high-barrier Se Schottky contacts to n-type GaN

Cited by 13 publications

References 35 publications

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Medium Energy Carbon and Nitrogen Ion Beam Induced Modifications in Charge Transport, Structural and Optical Properties of Ni/Pd/n-GaN Schottky Barrier Diodes

Transport mechanisms and interface properties of W/p-InP Schottky diode at room temperature

Electrical and carrier transport properties of the Au/Y2O3/n-GaN metal-insulator-semiconductor (MIS) diode with rare-earth oxide interlayer

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