Electronic Properties of Semiconductor Interfaces

Mönch, Winfried

doi:10.1007/978-3-319-48933-9_8

Cited by 12 publications

(11 citation statements)

References 61 publications

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“…A complete analysis of the transport mechanisms at stake in these Schottky junctions in the depletion regime at various temperatures is currently under submission [7]. In this later study, different methods able to extract the true homogeneous potential barrier height Φ hom B , free of the random barrier lowering due to interface inhomogeneities and described by its standard deviation σ [8,9], are demonstrated and applied. The derivation of parameters displayed in Fig.…”

Section: Experimental Transport Characteristics Of Devicesmentioning

confidence: 99%

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Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Muret

Eon

Traoré

et al. 2015

Physica Status Solidi (a)

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Heterostructures such as Schottky diodes and metal/oxide/ semiconductor structures are the building blocks of diamond electronic devices. They are able to carry large current densities, up to several kA cm −2 , if a heavily boron-doped layer (p ++ ) is included in the semiconducting stack, thus affording a metallic reservoir of mobile holes close to the lightly doped layer (p − ). In this work, hole injection effects are evidenced experimentally in the two previously mentioned devices and also simulated numerically. Although the potential barrier height at metal/semiconductor interfaces is a fundamental parameter, a more general approach consists in defining the current density from the product of an effective velocity and carrier concentration at interface. In accordance with experimental results, such a view permits to describe both depletion and accumulation regimes, which indeed can exist at the metallic or oxide interface, and to take into account the increase of the hole concentration above the thermal equilibrium one in the p − layer. The lower the temperature, the larger is this second effect. For sufficiently thin p − layers, typically below 2 m, this effect frees device operation from the limitation due to incomplete ionization of acceptors and allows a strong decrease of the specific resistance and forward losses while preserving breakdown voltages in the range of 1.4-2 kV.

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Section: Experimental Transport Characteristics Of Devicesmentioning

confidence: 99%

“…Taking into account the image force effect which adds 0.04 V to the barrier at flat bands [7,9] and the calculated energy difference between the bulk Fermi level and valence band top of 0.38 eV from data in [1], the applied voltage needed to induce flat bands amounts to 0.63 V, as indicated in Fig. 1.…”

Section: Experimental Transport Characteristics Of Devicesmentioning

confidence: 99%

Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Muret

Eon

Traoré

et al. 2015

Physica Status Solidi (a)

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“…Hence, the net photocurrent due to the built-in electric fields is zero. The schottky barrier height (Φ B ) is approximated using the Schottky-Mott rule, as described in [20], [38], [39]. The work function values of graphene and TiN are taken as 4.6 eV [40], [41] and 4.3 eV [42], respectively.…”

Section: Operating Principlementioning

confidence: 99%

Plasmonic Photovoltaic Double-Graphene Detector Integrated Into TiN Slot Waveguides

Alaloul

Khurgin

2021

IEEE Photonics J.

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Graphene has emerged as an ultrafast photonic material for on-chip photodetection. However, its atomic thickness limits its interaction with guided optical modes, which in turn weakens the photoresponse of waveguide-integrated graphene photodetectors. Nonetheless, it is possible to enhance the interaction of guided light with graphene by nanophotonic means. Herein, we propose a practical design of a plasmon-enhanced photovoltaic double-graphene detector that is integrated into 5 µm long titanium nitride slot waveguides. The use of double-graphene in this configuration yields a high responsivity of 2.18 A/W and more for a 0.5 V bias, across the telecom C-band and beyond. Moreover, the device operates at an ultra-high-speed beyond 100 GHz with an ultra-low noise equivalent power of < 35 pW/ √ Hz. The reported features are highly promising and are expected to serve the needs of next-generation optical interconnects.

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“…Therefore, in device processing, it is crucial to obtain ohmic contacts at the metal/semiconductor interface, being a fundamental building block of any semiconductor device. This metal/semiconductor tandem is frequently called a Schottky barrier device with defined current–voltage (I–V) characteristics [ 9 , 10 ]. Contact resistance, in particular specific contact resistivity ( ρ c ), is an important parameter characterizing metal/semiconductor interfaces and metal contacts, a practical quantity describing real contact.…”

Section: Introductionmentioning

confidence: 99%

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

Złotnik

Wróbel

Boguski

et al. 2021

Sensors

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Narrow band-gap semiconductors, namely ternary InAsSb alloys, find substantial technological importance for mid-infrared application as photodetectors in medical diagnostics or environmental monitoring. Thus, it is crucial to develop electrical contacts for these materials because they are the fundamental blocks of all semiconductor devices. This study demonstrates that electroplated gold contacts can be considered as a simple and reliable metallization technology for the electrical-response examination of a test structure. Unalloyed electroplated Au contacts to InAsSb exhibit specific contact resistivity even lower than vacuum-deposited standard Ti–Au. Moreover, temperature-dependent transport properties, such as Hall carrier concentration and mobility, show similar trends, with a minor shift in the transition temperature. It can be associated with a difference in metallization technology, mainly the presence of a Ti interlayer in vacuum-deposited contacts. Such a transition may give insight into not only the gentle balance changes between conductivity channels but also an impression of changing the dominance of carrier type from p- to n-type. The magnetotransport experiments assisted with mobility spectrum analysis clearly show that such an interpretation is incorrect. InAsSb layers are strongly p-type dominant, with a clear contribution from valence band carriers observed at the whole analyzed temperature range. Furthermore, the presence of thermally activated band electrons is detected at temperatures higher than 220 K.

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Electronic Properties of Semiconductor Interfaces

Cited by 12 publications

References 61 publications

Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Hole injection contribution to transport mechanisms in metal/p−/p++ and metal/oxide/p−/p++ diamond structures

Plasmonic Photovoltaic Double-Graphene Detector Integrated Into TiN Slot Waveguides

Facile and Electrically Reliable Electroplated Gold Contacts to p-Type InAsSb Bulk-Like Epilayers

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