Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctions

Gouskov, L.; Gouskov, A.; Girault, B.

doi:10.1002/pssa.2210470121

Cited by 7 publications

(7 citation statements)

References 12 publications

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“…These findings are quite different from the electrical properties of DB35 which have the same rate as DB34 as given in table 3. Similar acceptor energy and compensation ratio have been reported in a few studies [18,22,23]. The reason behind this difference is not known but its existence in the literature and in one of our measurements indicates that there is a rare inhomogeneity in GaTe.…”

Section: Annealing Effect On Electrical Properties Of Gatesupporting

confidence: 89%

Electrical transport properties of p-GaTe grown by directional freezing method

Efeoǧlu¹,

Karacalı²,

Abay³

et al. 2004

Semicond. Sci. Technol.

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p-type GaTe single crystals have been grown using the directional freezing method with different growth rates. Temperature-dependent Hall effect and resistivity measurements were carried out in the 80-325 K temperature range and at 1.6 T magnetic field. The free carrier concentration in the exhaust region was in the range of 9 × 10 15 -8 × 10 16 cm −3 for growth rates of 3.3-0.39 µm s −1 and the hole mobility at 300 K ranged from 4.8 to 21 cm 2 V −1 s −1 . A systematic dependence of the hole carrier concentration and room temperature hole mobility on the growth rate was not observed. From temperature-dependent Hall measurements, we have found that the compensation ratio N D /N A was in the range of 0.39-0.69 regardless of the growth rate. The highest mobility of 342 cm 2 V −1 s −1 at 100 K was achieved after annealing at 200 • C for 30 min. The fitting of the temperature-dependent free carrier concentration, using the single acceptor-single donor model, was used to determine the compensation ratio. Finding N max (m * ) 3/2 = 3.15 indicates high effective mass for holes or the possibility of a few close maxima of valence band edges with different effective masses.

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Section: Annealing Effect On Electrical Properties Of Gatesupporting

confidence: 89%

Electrical transport properties of p-GaTe grown by directional freezing method

Efeoǧlu¹,

Karacalı²,

Abay³

et al. 2004

Semicond. Sci. Technol.

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“…(1a) and (1b). The increase in series resistance for a decreasing temperature is related to the bulk resistance of GaTe [13,25,31]. Free carriers in unintentially doped GaTe is supplied from deep acceptor levels located above valance band at 140 meV [13].…”

Section: Forward-bias I-v T Characteristicsmentioning

confidence: 99%

Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Gülnahar

Efeoǧlu

2009

Solid-State Electronics

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“…There have been continuing efforts devoted to the study of III-VI layered compounds such as GaTe and GaSe because of their anisotropic physical properties and potential optoelectronic device applications. In this group, the electrical and optical properties of GaSe have been extensively studied, whereas even the fundamental properties of GaTe are not well known [1,2]. However, optical absorption measurements on GaTe have been carried out by a group of researchers [3][4][5][6][7] to identify the fundamental band edge.…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes

Coşkun¹,

Aydoğan²,

Efeoǧlu³

2003

Semicond. Sci. Technol.

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A Schottky barrier diode on unintentionally doped p-type GaTe grown by the directional freezing method was obtained and characterized by the capacitance-voltage technique as a function of temperature (100-300 K). Using vacuum evaporated Sn as the Schottky barrier contact and In for the ohmic contact, high-quality diodes were produced. The discrepancy between Schottky barrier heights (BHs) obtained from current-voltage-temperature and capacitance-voltage-temperature measurements is explained by the introduction of a spatial distribution of BHs due to barrier height inhomogeneities that prevail at the metal/GaTe interface. The deviations of apparent BHs were investigated by considering the microstructure of the metal/GaTe interface. It was found that the dispersion of this distribution across the contact area grew increasingly larger at lower temperatures and was responsible for the increasing difference between apparent BHs obtained from the two techniques.

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Electrooptical properties of SnO2 spray–GaSe and SnO2 spray–GaTe heterojunctions

Cited by 7 publications

References 12 publications

Electrical transport properties of p-GaTe grown by directional freezing method

Electrical transport properties of p-GaTe grown by directional freezing method

Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes

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