Temperature dependence of reverse bias capacitance–voltage characteristics of Sn/p-GaTe Schottky diodes

Abstract

A Schottky barrier diode on unintentionally doped p-type GaTe grown by the directional freezing method was obtained and characterized by the capacitance-voltage technique as a function of temperature (100-300 K). Using vacuum evaporated Sn as the Schottky barrier contact and In for the ohmic contact, high-quality diodes were produced. The discrepancy between Schottky barrier heights (BHs) obtained from current-voltage-temperature and capacitance-voltage-temperature measurements is explained by the introduction of a spatial distribution of BHs due to barrier height inhomogeneities that prevail at the metal/GaTe interface. The deviations of apparent BHs were investigated by considering the microstructure of the metal/GaTe interface. It was found that the dispersion of this distribution across the contact area grew increasingly larger at lower temperatures and was responsible for the increasing difference between apparent BHs obtained from the two techniques.

Electrical characterization of Au/n-ZnO Schottky contacts on n-Si

“…The details of the calculations have been given in Ref. [27]. The values of the barrier height extracted from the C-V curves are higher than derived from the I-V measurements.…”

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

“…The diffusion potential is obtained from the extrapolation of these straight lines to the voltage axis, and is given in Table 1. The depletion layer capacitance of diode can be expressed as [9][10][11][12][13][14][15][16][17].…”

“…In these devices, the conduction mechanism depends on various parameters such as surface preparation process, formation of barrier height (BH) and interface states (N ss ) at M/S interface, doping carrier concentration in semiconductor (N D or N A ), series resistance (R s ), substrate temperature and applied bias voltage [9][10][11][12][13][14]. Among them, R s is effective only in the downward curvature region (accumulation region) of the C-V characteristics, but the N ss is effective in weak inversion and depletion regions [15][16][17][18][19][20].…”

Electrical properties and the determination of interface state density from I-V, C-f and G-f measurements in Ir/Ru/n-InGaN Schottky barrier diode

“…This discrepancy can be explained due to the excess capacitance and the interfacial layer or barrier inhomogenities [17]. Such differences in the BHs determined from the I−V and C−V measurements are caused by the existence of the spatial inhomogenities at the metal-semiconductor (MS) interface of abrupt Schottky contacts suggested by Werner and Guttler [18].…”