2015
DOI: 10.1088/0268-1242/30/8/085014
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Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

Abstract: Room temperature electroreflectance (ER) spectroscopy has been used to study the fundamental properties of Al x In y Gai .j.^N/AlN/GaN heterostructures under different applied bias. The (OOOl)-oriented heterostructures were grown by metal-organic vapor phase epitaxy on sapphire. The band gap energy of the Al x ln y GcLi_ x _yN layers has been determined from analysis of the ER spectra using Aspnes' model. The obtained values are in good agreement with a nonlinear band gap interpolation equation proposed earlie… Show more

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Cited by 5 publications
(2 citation statements)
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“…The correlation can be explained by the fact that both the electric field in GaN and the 2DEG density are caused by the polarization discontinuities at the AlGaN/GaN heterointerfaces. It is interesting to note that a reverse behavior was observed by other authors for correlation of electric field strength in barrier layer and 2DEG density …”
Section: Resultsmentioning
confidence: 63%
“…The correlation can be explained by the fact that both the electric field in GaN and the 2DEG density are caused by the polarization discontinuities at the AlGaN/GaN heterointerfaces. It is interesting to note that a reverse behavior was observed by other authors for correlation of electric field strength in barrier layer and 2DEG density …”
Section: Resultsmentioning
confidence: 63%
“…In 0.16 Al 0.74-Ga 0.10 N with a narrower immiscibility and a quaternary barrier has demonstrated high carrier mobility (l > 1800 cm 2 /V s) and high electron density (n s $ 1.8 9 10 13 cm À2 ). [22][23][24][25]29,32,33,35 A GaN HEMT based on a quaternary barrier (InAlGaN) with a T-shaped gate (L g = 55 nm) without a backbarrier on Si substrate showed a peak drain current density of 1.25 A/mm along with a remarkable f T /f max of 145/220 GHz. 35 In recent years, the effort of nitride researchers has been directed towards latticematched In 0.16 Al 0.74 Ga 0.10 N/AlN/GaN heterostructures.…”
Section: Introductionmentioning
confidence: 99%