Element Resolved Spin Configuration in Ferromagnetic Manganese-Doped Gallium Arsenide

Abstract

We report induced Ga and As moments in ferromagnetic Ga(1-x)MnxAs detected using x-ray magnetic circular dichroism at the Mn, Ga, and As L(3,2) edges. Across a broad composition range, we find As and Ga dichroism signals which indicate an As 4s moment coupled antiparallel to the Mn 3d moment, and a smaller parallel Ga 4s moment. The Ga moment follows that of Mn in both doping and temperature dependence. These results are consistent with recent predictions of induced GaAs host moments and support the model of carrier-mediated ferromagnetic ordering involving As-derived valence band states.

Jahn-Teller distortion and ferromagnetism in the dilute magnetic semiconductors GaAs:Mn and cubic GaN:Mn

“…It is widely expected that new functionalities for electronics and photonics can be derived if the injection, transfer and detection of carrier spin can be controlled above room temperature in these dilute magnetic semiconductors (DMS) 4 . Most of the work in the past has focused on InAs:Mn 5,6,7,8 , GaAs:Mn 9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25 and Ge:Mn 27,28 . Novel control of magnetism has already been achieved in these host materials.…”

Effect of Ga+ irradiation on magnetic and magnetotransport properties in (Ga,Mn)As epilayers

“…[1,2,3,4,5,6] In order to use these materials in spin electronic devices, a promising approach to manipulating the holemediated properties is now required. In this study, we focus on Ga + ion irradiation technique which has been used for electronic modification of GaAs.…”

Mn3delectronic configurations in(Ga1−xMnx)Kronast1, Ovsyannikov2, Vollmer3 et al. 2006Phys. Rev. B120110View full textAdd to dashboardCite

“…24 Therefore, the 3d 6 weight leads to antiferromagnetic alignment between Mn and As magnetic moments as observed in Ref. 25. The mixedvalence 3d 5 -3d 6 configuration is characterized by an average number of n = 5.2 Mn 3d electrons on all sites.…”