1996
DOI: 10.1109/55.496453
|View full text |Cite
|
Sign up to set email alerts
|

Elimination of the sidewall defects in selective epitaxial growth (SEG) of silicon for a dielectric isolation technology

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2
1

Citation Types

0
6
0

Year Published

1997
1997
2004
2004

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 15 publications
(6 citation statements)
references
References 8 publications
0
6
0
Order By: Relevance
“…14 Thermally nitrided thermal silicon dioxide ͑NOX͒ can also eliminate sidewall defects in the SEG silicon region. 15 The present experimental results indicate that forming a layer of NOX around the active silicon region eliminates the edge transistors in SEG oxide trench isolated N-MOSFETs. The NOX effectively suppresses boron out-diffusion during the high temperature process steps.…”
Section: Introductionmentioning
confidence: 55%
“…14 Thermally nitrided thermal silicon dioxide ͑NOX͒ can also eliminate sidewall defects in the SEG silicon region. 15 The present experimental results indicate that forming a layer of NOX around the active silicon region eliminates the edge transistors in SEG oxide trench isolated N-MOSFETs. The NOX effectively suppresses boron out-diffusion during the high temperature process steps.…”
Section: Introductionmentioning
confidence: 55%
“…[1][2][3][4] More recently, selective growth has been used for epitaxial base for bipolar junction transistors, [5][6][7] epitaxial channel in metal-oxidesemiconductor field effect transistors ͑MOSFETs͒, [8][9][10] and device regions for advanced isolation. 11 Figure 1 shows the various selective growth techniques and how they can be applied to device fabrication. In addition, as silicon devices are scaled down to the deep submicron regime, the cost of device processing is increasing very rapidly.…”
Section: Backgroundõmotivationmentioning
confidence: 99%
“…Device isolation using selective epitaxial growth has been proposed earlier. 11,15,16 Figure 4 shows a typical device isolation process using selective epitaxial growth. As can be noted from the cross sections, the process is simple and easy a͒ Author to whom correspondence should be addressed; electronic mail: bashir@ecn.purdue.edu to implement.…”
Section: Backgroundõmotivationmentioning
confidence: 99%
See 1 more Smart Citation
“…1 To reduce device-to-device spacing, a new dielectric isolation was recently developed using SEG and high quality thermal SiO 2 insulators for a very simple low-cost method. 2 SEG has also been used to form novel device structures 3 and for making very high speed Si-Ge heterojunction bipolar transistors. 4 SOI device islands of silicon in SiO 2 have been demonstrated 5 with low stacking fault densities.…”
Section: Introductionmentioning
confidence: 99%