Emulator Circuits and Resistive Switching Parameters of Memristor

Yeşil, Abdullah; Gül, Fatih; Babacan, Yunus

doi:10.5772/intechopen.71903

Cited by 7 publications

(1 citation statement)

References 45 publications

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“…In the other case, figure 4(a) shows a typical I-V curve of our device, demonstrating the classical bipolar switching which indicates that the required voltage bias direction for reset is opposite to set. When the positive applied voltage exceeds certain threshold, the resistance decreases dramatically, which is generally attributed to oxygen ions drifting to the anode interface, the so-called formation of conductive filament in metal oxide [29][30][31]. By contrast, conductive filament breaking under reversed voltage returns the memory cell to high resistance state [32].…”

Section: Basic Characterization For Memristormentioning

confidence: 99%

Amplitude and frequency modulation based on memristor-controlled spin nano-oscillators

Wei

Fang

et al. 2019

Nanotechnology

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Spin transfer nano-oscillators (STNOs) are a new type of radio frequency (RF) oscillators that utilize the current-induced magnetization precession in a magnetic tunnel junction device to generate high frequency microwave signal. Since both the frequency and the amplitude of STNOs can be tuned by changing the current, they are potentially used for amplitude shift keying and frequency shift keying modulation without the need for an RF mixer, which leads to compact RF components. In this letter, a novel strategy is proposed to modulate the frequency and the amplitude by memristor-controlled spin nano-oscillators, whereby the STNO is responsible for microwave emitting and memristor serves as a current regulator which further modulates the frequency and amplitude. In addition, the I-V curves show that a multilevel resistance behavior can also be achieved in the same architecture.

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