Energy barriers and trapping centers in silicon metal-insulator-semiconductor structures with samarium and ytterbium oxide insulators

Rozhkov, V. A.; Trusova, A. Yu.; Berezhno, I. G.

doi:10.1134/1.1262059

Cited by 7 publications

(3 citation statements)

References 4 publications

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“…Porous silicon carbide was created by anodic etching of silicon carbide in a hydroalcoholic solution of hydrofluoric acid H 2 O:HF:C 2 H 5 OH = 1:1:2, the current density was 20 mA/cm 2 , and the etching time was 5 min. The material was then processed in an etchant KNO 3 + KОН to open the pores. Formation of the Er 2 O 3 film was carried out in several technological stages.…”

Section: Samples and Measurement Proceduresmentioning

confidence: 99%

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Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Bacherikov¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The comparative analysis of optical characteristics inherent to Er 2 O 3 /SiC and Er 2 O 3 /por-SiC/SiC structures has been performed. It has been shown that, regardless the substrate on which the Er 2 O 3 film is formed, an increase in the rapid thermal annealing time leads to an improvement in the oxide film composition, with the composition of the Er 2 O 3 film approaching to the stoichiometric one. At the same time, introduction of an additional porous SiC layer leads to a blurring of the oxide film/substrate interface and broadening the photoluminescence band measured in this structure.

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Section: Samples and Measurement Proceduresmentioning

confidence: 99%

“…In particular, questions related with the elucidation of the mechanisms of processes occurring on the surface and in the space charge region of semiconductor, with the search for and development of new dielectricsemiconductor systems are still unresolved [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Bacherikov¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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“…[13][14][15][16] In the literature, Dakhel 17 observed Schottky emission at the Al/Sm 2 O 3 interface in Al/Sm 2 O 3 /Al devices and extracted a Schottky barrier of s = 0.85 eV. Rozhkov et al 18 reported that the energy barriers at the Al/Sm 2 O 3 and the Si/Sm 2 O 3 interfaces extracted from internal photoemission of carriers were 2.89-2.91 and 2.70-2.72 eV, respectively. Yang and Xue 19 showed that the leakage current density of Sm 2 O 3 was 10 −4 A/cm 2 for an electric field of 0.24 MV/cm.…”

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confidence: 99%

Temperature Dependence of the Current Conduction Mechanisms in Sm[sub 2]O[sub 3] Thin Films

Chang

Hwang

Juan

et al. 2008

J. Electrochem. Soc.

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Metal-oxide-semiconductor capacitors with Sm 2 O 3 dielectric film were fabricated and the temperature dependence of the conduction mechanisms was studied. The Sm 2 O 3 films were deposited by radio frequency magnetron sputtering. The thickness of Sm 2 O 3 was 18.8 nm. The dielectric permittivity and the equivalent oxide thickness of capacitors with Sm 2 O 3 film were 15.0 and 4.8 nm, respectively. The X-ray photoelectron spectroscopy analysis showed a silicate interfacial layer formed between Sm 2 O 3 and Si. When the aluminum electrode was biased positive, the dominant conduction mechanism was Schottky emission in the temperature range 475 K Ͻ T Ͻ 500 K and at an electrical field of 0.8 MV/cm Ͻ E Ͻ 1.4 MV/cm. In the temperature range 300-425 K, the dominant conduction mechanism was most likely space-charge-limited conduction. When the aluminum electrode was biased negative, the dominant conduction mechanism in the temperature range from 325 to 500 K and at an electrical field from 0.08 to 0.81 MV/cm was Schottky emission. At 77 K and with the electrical field above 0.9 MV/cm, the conduction mechanism was Fowler-Nordheim ͑F-N͒ tunneling. The Al/Sm 2 O 3 electron barrier height and the effective electronic mass calculated from Schottky emission and F-N tunneling were 0.82 eV and 0.13 m 0 , respectively.Recently, many candidates such as tantalum oxide ͑Ta 2 O 5 ͒, 1 titanium dioxide ͑TiO 2 ͒, 2 aluminum oxide ͑Al 2 O 3 ͒, 3 zirconium ͑ZrO 2 ͒, 4-6 hafnium oxide ͑HfO 2 ͒, 4-8 dysprosium oxide ͑Dy 2 O 3 ͒, 9-12 and samarium oxide ͑Sm 2 O 3 ͒ have been introduced as alternative gate dielectrics. Among these high-k oxides, Sm 2 O 3 is a potential candidate to achieve high dielectric constant ͑12-13͒, large energy bandgap ͑4.33 eV͒, high thermal stability, and low leakage current density. [13][14][15][16] In the literature, Dakhel 17 observed Schottky emission at the Al/Sm 2 O 3 interface in Al/Sm 2 O 3 /Al devices and extracted a Schottky barrier of s = 0.85 eV. Rozhkov et al. 18 reported that the energy barriers at the Al/Sm 2 O 3 and the Si/Sm 2 O 3 interfaces extracted from internal photoemission of carriers were 2.89-2.91 and 2.70-2.72 eV, respectively. Yang and Xue 19 showed that the leakage current density of Sm 2 O 3 was 10 −4 A/cm 2 for an electric field of 0.24 MV/cm. However, there are relatively few reports on the temperature dependence of the conduction mechanisms with Sm 2 O 3 dielectric. In this work, the material properties were investigated by X-ray photoelectron spectroscopy ͑XPS͒ and transmission electron microscopy ͑TEM͒. The conduction mechanisms such as Schottky emission, Fowler-Nordheim ͑F-N͒ tunneling, and space-chargelimited conduction ͑SCLC͒ were also studied.Experimental p-Type, ͑100͒ orientation, 4 in. diameter silicon wafers with 5-10 ⍀ cm resistivity were used as the starting substrates. Following wafer cleaning, the Sm 2 O 3 films were deposited at room temperature by radio frequency magnetron sputtering in argon ͑Ar͒. The pressure of Ar gas during deposition was 5 ϫ 10 −3 Torr. The thic...

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Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors

Seguini¹,

Perego²,

Fanciulli³

Topics in Applied Physics

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Energy barriers and trapping centers in silicon metal-insulator-semiconductor structures with samarium and ytterbium oxide insulators

Cited by 7 publications

References 4 publications

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Optical properties of thin erbium oxide films formed by rapid thermal annealing on SiC substrates with different structures

Temperature Dependence of the Current Conduction Mechanisms in Sm[sub 2]O[sub 3] Thin Films

Experimental Determination of the Band Offset of Rare Earth Oxides on Various Semiconductors

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