Energy states of Be in GaAs

Lewis, R. A.; Cheng, T. S.; Henini, M.; Chamberlain, J.M.

doi:10.1103/physrevb.53.12829

Cited by 29 publications

(21 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Detailed far-infrared absorption spectra for these samples have been published previously. 17 Measurements were made using two Fourier spectrometers equipped with globar light sources and liquid-helium cooled Si bolometer detectors. Appropriate beam splitters were employed to optimize the signal for the various spectral features examined.…”

Section: Methodsmentioning

confidence: 99%

Magnetospectroscopy of Be in GaAs

2003

Self Cite

View full text Add to dashboard Cite

Far-infrared absorption measurements have been made of the Lyman series of the acceptor Be in GaAs up to magnetic fields of 30 T, supplemented by photothermal ionization spectroscopy measurements to 6 T. The results confirm and greatly extend previous work and reveal several phenomena. The strongest component of the G line moves to higher energies and increases in intensity with field. Around 20 T the field dependence of the transition displays a marked kink. At higher fields the dependence of energy on field is linear. This behavior is attributed to unresolved components that change in relative intensity with field and leads to a reappraisal of the identity of the low-field transition. The D line is followed to high fields allowing an accurate determination of the splitting of the field-induced components of the second excited state. Photothermal ionization spectra for the C line permit the determination of the splitting of the field-induced components of the ground state and of the third excited state. At high magnetic field an absorption appears which increases in energy with field at a much greater rate than any of the lines mentioned above. It is thought to originate in the valence-band Landau levels.

show abstract

Section: Methodsmentioning

confidence: 99%

Magnetospectroscopy of Be in GaAs

2003

Self Cite

View full text Add to dashboard Cite

show abstract

“…In the spectral region from 110 cm −1 to 240 cm −1 , the transmission spectrum at B = 0 T shows four main absorption peaks with energies and relative intensities characteristic of hole transitions from the ground to the excited states of shallow acceptors. [14][15][16] Transitions at 124.2 ± 0.5 cm −1 , 156 ± 1 cm −1 , and 172.7 ± 0.5 cm −1 are attributed to the three first parity-allowed transitions of the Lyman series, namely, the G, D, and C lines, in the order. 16,17 The energy differences between C and D lines (16.7 ± 1.5 cm −1 ), and G and D lines (31.8 ± 1.5 cm −1 ) are in good agreement with those theoretically predicted and experimentally observed for shallow acceptors in GaAs.…”

mentioning

confidence: 97%

Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy

et al. 2011

View full text Add to dashboard Cite

“…Usually, such intraacceptor transitions are studied at low doping densities ͑Ͻ3 ϫ 10 16 cm −3 ͒ to avoid impurity band effects smearing out the sharp absorption lines at higher concentrations. 8 The effect of quantum confinement on the transitions of a͒ Author to whom correspondence should be addressed; electronic mail: jk@pfi.lt…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs∕AlAs multiple quantum wells

Čechavičius¹,

Kavaliauskas²,

Krivaitė

et al. 2005

Journal of Applied Physics

View full text Add to dashboard Cite

Article:Cechavicius, B., Kavaliauskas, J., Krivaite, G. et We present an optical study of beryllium ␦-doped GaAs/ AlAs multiple quantum well ͑QW͒ structures designed for sensing terahertz ͑THz͒ radiation. Photoreflectance ͑PR͒, surface photovoltage ͑SPV͒, and wavelength-modulated differential surface photovoltage ͑DSPV͒ spectra were measured in the structures with QW widths ranging from 3 to 20 nm and doping densities from 2 ϫ 10 10 to 5 ϫ 10 12 cm −2 at room temperature. The PR spectra displayed Franz-Keldysh oscillations which enabled an estimation of the electric-field strength of ϳ20 kV/ cm at the sample surface. By analyzing the SPV spectra we have determined that a buried interface rather than the sample surface mainly governs the SPV effect. The DSPV spectra revealed sharp features associated with excitonic interband transitions which energies were found to be in a good agreement with those calculated including the nonparabolicity of the energy bands. The dependence of the exciton linewidth broadening on the well width and the quantum index has shown that an average half monolayer well width fluctuations is mostly predominant broadening mechanism for QWs thinner than 10 nm. The line broadening in lightly doped QWs, thicker than 10 nm, was found to arise from thermal broadening with the contribution from Stark broadening due to random electric fields of the ionized impurities in the structures. We finally consider the possible influence of strong internal electric fields, QW imperfections, and doping level on the operation of THz sensors fabricated using the studied structures.

show abstract

Energy states of Be in GaAs

Cited by 29 publications

References 26 publications

Magnetospectroscopy of Be in GaAs

Magnetospectroscopy of Be in GaAs

Compositional evolution of Bi-induced acceptor states in GaAs1−xBixalloy

Photoreflectance and surface photovoltage spectroscopy of beryllium-doped GaAs∕AlAs multiple quantum wells

Contact Info

Product

Resources

About