Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

Lu, Jing; Zheng, Xiaoting; Guidry, Matthew; Denninghoff, Dan; Ahmadi, Elham; Lal, Shalini; Keller, S.; DenBaars, Steven P.; Mishra, Umesh K.

doi:10.1063/1.4867508

Cited by 31 publications

(16 citation statements)

References 18 publications

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“…In N-polar oriented devices, the barrier is located below the channel, allowing easier access for low resistance ohmic contact formation and improved electron confinement via a built-in back-barrier [7,8]. N-polar HEMTs also offer improved scalability through independent control of the gate-2DEG thickness and the barrier thickness, allowing the barrier design to compensate for the loss of sheet charge density as the channel thickness is scaled down [9]. In addition, the quantum displacement of the 2DEG towards the surface relative to the barrier/channel interface places the 2DEG closer to the gate, reducing short-channel effects and improving frequency performance [10].…”

Section: Introductionmentioning

confidence: 98%

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Hardy

Storm

Nepal

et al. 2015

Journal of Crystal Growth

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Section: Introductionmentioning

confidence: 98%

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Hardy

Storm

Nepal

et al. 2015

Journal of Crystal Growth

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“…Однако существует целый ряд приложений, где N-полярные соединения имеют преимущества. Так, например, в N-полярных транзисторных гетероструктурах GaN/AlGaN направление поля внутренней поляризации создает энергетический барьер, который препятствует " выбросу" электронов из канала в буферный слой, что имеет потенциальные преимущества по сравнению с Ga-полярными транзисторными гетероструктурами GaN/AlGaN, в которых такого барьера не образуется [3]. Кроме того, большая эффективность встраивания индия при росте N-полярных твердых растворов в InGaN по сравнению с Ga-полярными позволяет использовать более высокие температуры роста при эпитаксии N-полярных наногетероструктур InGaN/GaN с высоким содержанием In, что ведет к их более высокому кристаллическому качеству [4].…”

Section: Introductionunclassified

Особенности начальных стадий роста GaN на подложках Si(111) при молекулярно-пучковой эпитаксии с плазменной активацией азота

Мизеров¹,

Тимошнев²,

Соболев³

et al. 2018

Физика И Техника Полупроводников

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Представлены результаты исследований влияния на кинетику роста и полярность слоев GaN/Si(111) начальных условий при молекулярно-пучковой эпитаксии с плазменной активацией азота-условий нитридизации подложки Si(111), температуры роста GaN, стехиометрических условий роста GaN. Экспериментально установлено, что оптимальными начальными условиями эпитаксии GaN на подложках Si(111) является высокотемпературная нитридизация подложки Si(111), проводимая непосредственно перед ростом GaN. Показана возможность управления полярностью GaN за счет соответствующего выбора роста в условиях с N-или Ga-обогащением на начальной стадии эпитаксии GaN/Si(111).

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“…4,6 Through optimization of device structure and growth conditions, high conductivity 5 nm N-polar GaN channel devices with high mobilities (1100 cm 2 /V.s) have been recently reported. [19][20][21][22] In order to continue further increase in the high frequency performance in sub-20-nm gate length devices, extreme channel thickness scaling (<5 nm) with high 2DEG mobility will be necessary. It is therefore important to evaluate the limits of 2DEG mobility arising from high-k dielectrics on these thin channels.…”

Section: Introductionmentioning

confidence: 99%

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

Ghosh

Singisetti

2015

Journal of Applied Physics

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N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density. V

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Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

Cited by 31 publications

References 18 publications

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates

Особенности начальных стадий роста GaN на подложках Si(111) при молекулярно-пучковой эпитаксии с плазменной активацией азота

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

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