Enhanced efficiency of CdTe Photovoltaic by thermal evaporation Vacuum

Fadaam, Suha A.; Mustafa, Mohamed Hamid; Alrazak, Ali H. Abd; Shihab, Aliyah A.

doi:10.1016/j.egypro.2018.11.229

Cited by 21 publications

(5 citation statements)

References 13 publications

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“…The Tauc equation was used to compute the optical energy-gap in the high absorption region [25,26]. CdTe and CdTe:Ag have energy band gaps of 1.52 and 1.47, respectively and this result is very close to the value of the energy gap obtained for pure CdTe films by Fadaam [27]. Table 3 displays Ag ratio in Ag-doped thin films.…”

Section: Fig 3 Refractive Index Transmittance and Absorbance Of Thin ...supporting

confidence: 65%

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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We investigated at the optical properties, structural makeup, and morphology of thin films of cadmium telluride (CdTe) with a thickness of 150 nm produced by thermal evaporation over glass. The X-ray diffraction study showed that the films had a crystalline composition, a cubic structure, and a preference for grain formation along the (111) crystallographic direction. The outcomes of the inquiry were used to determine these traits. With the use of thin films of CdTe that were doped with Ag at a concentration of 0.5%, the crystallization orientations of pure CdTe (23.58, 39.02, and 46.22) and CdTe:Ag were both determined by X-ray diffraction. orientations (23.72, 39.21, 46.40) For samples that were pure and those that were doped with silver, the optical band gap shrank by (1.52-1.47) eV (400–1100)nm resulting in a drop in the absorption coefficient. An incident power density of (100 mW/cm2) was used to examine the I-V properties of heterojunctions created by light on a variety of clean and doped materials. In accordance with the X-ray diffraction analysis, the films had a cubic structure and dominated grain growth along the (111) crystallographic direction.

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Section: Fig 3 Refractive Index Transmittance and Absorbance Of Thin ...supporting

confidence: 65%

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Ali¹,

Mustafa²

2023

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“…The optical properties of the films deposited on glass slides were studied by UV-visible spectrophotometer, where the transmittance spectra for wavelengths (300-900) nm were taken in the figure (5). The transmittance spectrum of the CdTe film shows a decrease in the transmittance ratio with a decrease in the visible and ultraviolet region wavelengths [20], the same thing happened with the transmittance spectrum of vanadium pentoxide (V2O5) [21], the transmittance spectrum of SnO2 film shows very high in the visible region, which makes it one of the best windows in solar cells [17]. The energy gap values for the films were also calculated and they were (1.55, 2.8, 3.5) eV, for CdTe, V2O5 and SnO2 respectively, as in the figure (6).…”

Section: Uv-visible Spectroscopy Analysismentioning

confidence: 99%

Fabrication and study of (p-Si/CdTe/V2O5/SnO2) solar cell

Farhan¹,

Abdullah²,

Kamel³

2023

Global J. Eng. Technol. Adv.

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This article discusses a simple vacuum evaporation technique for deposition of CdTe thin films with different thicknesses (100, 200, 300, 400, and 500) nm on P-type silicon substrates. Then, V2O5 and SnO2 thin films were deposited as a buffer layer and window layer with a thickness of 100 nm respectively, using the same technique. In addition, other samples of these films have been deposited on a glass substrate for the purpose of studying optical transmission and their optical properties. X-ray diffraction (HR-XRD) was used to characterize the films crystalline structures. The aim of this work is to investigate the effects of different thicknesses of CdTe thin films on the optical, Structural and electrical potential of CdTe/V2O5/SnO2 films and their potential applications in solar cells. The results show that using different thicknesses of CdTe-deposited thin films can enhance the performance. The efficiency improved by increasing the thickness of the CdTe films, and at 500 nm it reached (3.3%), and with a Voc (0.382 Volt).

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“…11 PSi has a direct band gap, variable refractive index, low reflectivity, as well as indiscriminate morphological installation, which made it a potential substance for the application of photovoltaic. 12 The family of transition metal dichalcogenides (TMDs) has generated considerable interest in the realm of two-dimensional (2D) materials, as evidenced by the existing literature. 13 TMDs possess a hexagonal lattice structure and exhibit light absorption capabilities within the visible-toinfrared range.…”

Section: Introductionmentioning

confidence: 99%

“…To withstand the highly corrosive nature of HF, the electrolysis cell is typically constructed using acid-resistant polymers like Teflon 11 . PSi has a direct band gap, variable refractive index, low reflectivity, as well as indiscriminate morphological installation, which made it a potential substance for the application of photovoltaic 12 . The family of transition metal dichalcogenides (TMDs) has generated considerable interest in the realm of two-dimensional (2D) materials, as evidenced by the existing literature 13 .…”

Section: Introductionmentioning

confidence: 99%

Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications

2023

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.The nanocomposite, poly(3-hexylthiophene-2,5-diyl) (P3HT)–graphene/molybdenum disulfide (MoS2), was for the first time fabricated by the pulse laser ablation (PLA) method with different numbers of laser pulses deposited onto a porous silicon (PSi) substrate using the drop-casting technique. Nanocrystalline PSi films are prepared by electrochemical etching of a P-type silicon wafer. The optical properties, transmission electron microscope (TEM), and photodetector properties were studied. Optical measurements confirmed that the energy gap decreases from 2.03 to 1.87 eV with the increasing number of laser pulses for graphene and MoS2. This decrease in the energy gap was attributed to the increase in graphene and its combination with molybdenum. Due to the higher electrical conductivity of the hybrid material, the MoS2 leads to reduce the band gap. From the TEM images, it was found that the average size of the particles was between 3.1 and 20.8 nm depending on increasing the number of laser pulses for both graphene and MoS2 with hemispherical particle shapes. The Ag / PSi / P3HT − G / MoS2 / Ag photodetector was fabricated for all samples prepared to characterize the effect of laser pulses number for graphene and MoS2 on the photodetector performance. The maximum value of the specific response, specific detection, and quantum efficiency was 0.35 A / W, 5.1 × 1012 cm Hz1/2 W − 1, and 49.2% at 900 nm due to the absorption edge of silicon around 0.23 A / W, 3.3 × 1012 cm Hz1/2 W − 1, and 38.9% at 760 nm due to the absorption edge of P3HT − G / MoS2 NPS. The results indicate that the PLA method successfully fabricated the P3HT − G / MoS2 nanocomposites and that the resulting product exhibited high values in responsivity, detectivity, and quantum efficiency. Additionally, it appears that the nanocomposites may have enhanced the same parameters of the PSi photodetector.

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Enhanced efficiency of CdTe Photovoltaic by thermal evaporation Vacuum

Cited by 21 publications

References 13 publications

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Optimization physical properties of CdTe /Si solar cell devices fabricated by vacuum evaporation

Fabrication and study of (p-Si/CdTe/V2O5/SnO2) solar cell

Synthesis and characterization of thin films of P3HT − G/MoS2 nanocomposites in photodetectors applications

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