Enhanced resistive switching performance for bilayer HfO<sub>2</sub>/TiO<sub>2</sub>resistive random access memory

Ye, Cong; Deng, Tengfei; Zhang, Junchi; Shen, Lu; He, Ping; Wei, Wei; Wang, Hao

doi:10.1088/0268-1242/31/10/105005

Cited by 58 publications

(42 citation statements)

References 34 publications

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“…[9] Figure 1a shows typical I-V curves of ITO/TiO 2 /HfO 2 /Pt device. [18] The detail RS mechanisms related to the movements of oxygen vacancies will be discussed below. The device shows stable bipolar RS behavior.…”

Section: Resultsmentioning

confidence: 99%

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

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139

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important role in flexible electronics. [1][2][3] Nonvolatile resistive random access memories (RRAM) have simple structure, excellent scalability, high switching speed, good retention, and low power consumption. Thus, they have been considered as promising candidates for charge-based memory and Flash. [4,5] In terms of flexible RRAM (FRRAM) applications, the investigations mainly focus on device processing, resistive switching (RS) behaviors, and mechanical flexibilities. [6][7][8] Many efforts have been devoted to achieve high performance FRRAMs with both small RS parameters variation and excellent flexibility. One of the representative obstacles is the nonuniformity of RS parameters, which leads to false programming and gives rise to readout hazards. [9,10] Some FRRAMs demonstrated fast programming speed, large storage window, excellent flexibility, and mechanical endurance. However, the coefficients of variation for the RS parameters were unexpectedly high. [10] On the basis of conducting filament (CF) theory in RRAM devices, the switching mechanism is highly depended on the CF formation/disruption during the writing/programming process, which in turn affects the device performance. As concerned as the valence change memory (VCM) RRAM, oxygen vacancies play an important role in a redox reaction, which determines the filament morphology. In order to enhance the performance and improve the distribution of switching parameters, bilayer RS structure such as /indium tin oxide (ITO), is proposed. Such RS layer can control the formation/rupture of CF consisting of oxygen vacancies. [11][12][13] HfO 2 and TiO 2 are typical high dielectric constant transition metal oxides in complementary metal oxide semiconductor (CMOS) integrated circuit applications. Due to the simple compositions and good compatibilities with CMOS processing, they have been widely investigated for memory device applications. [14] Especially, HfO 2 /TiO 2 bilayer structure has exhibited desired features, including self-rectification, multiple resistance states, self compliance, and stable bipolar RS property. [14,15] Bilayer structure based RRAM can operate at low voltage, which decreases the heat accumulation in the operating process and reduces the power consumption. [16] Thus, it is speculated that the stability of bilayer HfO 2 /TiO 2 FRRAM device will be improved by avoiding the undesirable heating during the read/write process. The low energy consumptions and high stabilities are highly desirable for wearable electronic applications.The authors declare no conflict of interest. Figure 6. a) The 1000th, 1500th, and 2000th I-V curves taken on FRRAM device. b) I-V curves at different stop voltages ranged between −1.3 and −1.6 V with step of 0.1 V.www.advancedsciencenews.com

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Section: Resultsmentioning

confidence: 99%

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Zhang

Huang

Xia

et al. 2019

Adv Elect Materials

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139

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“…This implies that the electrons have to surpass an additional potential energy barrier between the conductive lament (CF) and the N:ITO electrode. 23,24 According to the current tting results, we further investigated the RS mechanisms for both devices to explore the possible reason for the performance improvement in the memory cell with the ITO transparent electrode induced by SCFnitridation treatment. During the repeated set and reset process, the formation and rupture of CFs were accompanied by the recombination and separation of oxygen ions (O 2À ) and oxygen vacancies (Vo + ) near by the ITO electrode.…”

Section: Resultsmentioning

confidence: 99%

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Pan

et al. 2017

RSC Adv.

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A low temperature supercritical fluid nitridation (SCF-nitridation) technique was investigated to dope nitrogen into a indium-tin-oxide (ITO) electrode to boost the performance of hafnium oxide resistive random access memory (RRAM). After the SCF-nitridation treatment, the memory window for the N:ITO electrode device was increased from 40 to 100. Moreover, the operation voltages (V SET and V RESET ) and currents (I ON and I OFF ) were remarkably decreased, in which the I OFF was decreased to 65 nA. The possible reason for the performance improvement of resistive switching memory with the ITO transparent electrode induced by SCF-nitridation treatment was carefully explored. Fig. 5 The conduction current fitting results of the RRAM devices with the (a) ITO/HfO 2 /TiN and (b) N:ITO/HfO 2 /TiN structures. A schematic of the migration of oxygen ions in the SET process with the (c) ITO/HfO 2 /TiN and (d) N:ITO/HfO 2 /TiN structures.This journal is

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“…[31][32][33] In our previous work, it is observed that operating voltage of Pt/HfO 2 /TiO 2 /ITO RRAM device is lower than that of Pt/HfO 2 /ITO RRAM device. [34] Following our previous work, we proposed bilayered HfO 2 /TiO x cognitive memristor. The neuromorphic device can operate at low voltage as low as 0.6 V. Multistore memory model of brain is demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities

Xiong

Zhu

et al. 2019

Adv Elect Materials

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our brain would solve this dilemma, that is, the von Neumann bottleneck. Thus, neuromorphic engineering comes into being. Basically, data-driven neuromorphic engineering needs to complete a large number of data processing tasks. Presently, one of the main tasks in the state-ofthe-art neuromorphic computing system is to optimize neuromorphic algorithm. Due to the use of von Neumann architecture, such neuromorphic systems always consume extremely high energy. In fact, our brain nervous system is consisted of ≈10 11 neurons connected by ≈10 15 synapses. [3] Neurons and synapses are basic units in brain information processing. Brain cognitive behaviors occur through synaptic responses and neural functions. And the synaptic plasticity is the most important characteristics of synapse. Such architecture makes our brain operate in extremely high energy efficiency with certain fault tolerance to respond to our surroundings. Thus, brain-inspired neuromorphic devices have been proposed for mimicking biological synaptic responses and neural functions. [4][5][6] It is getting a new branch for neuromorphic engineering.Recently, with the developments of microelectronics, optoelectronics, and material technologies, solid-state neuromorphic devices have been proposed to mimic biological synaptic functions. Such devices include two-terminal resistance change memory devices [7][8][9][10] and field-effect transistor based neuromorphic transistors. [11][12][13][14][15] Due to the simple sandwich structure, two-terminal memristors have the inherent priority in 3D integrity. They have been widely investigated for high density storage applications. [16,17] With nonlinear electrical characteristics and nonvolatile resistance modulation effects, two-terminal memristors are very suitable for neuromorphic device applications. Such devices include ferroelectric random access memory (FeRAM), phase change random access memory (PCRAM), resistive random access memory (RRAM), etc. [18][19][20][21][22] In fact, most of the recent reported neuromorphic devices are based on two-terminal memristors. Especially with the deep understanding of the operation mechanisms of memristors, neural operation and typical Modified National Institute of Standards and Technology (MNIST) pattern recognition have also been demonstrated by using memristor arrays. [23][24][25] In addition, energy consumption is another important index in neuromorphic device applications. Recently, several works have been reported on neuromorphic device with low energy consumption. [26][27][28][29][30] Xu et al. [26] obtained organic nanowire synaptic transistors with energy consumption of ≈1.23 fJ per Recently, neuromorphic devices have attracted great attention due to their potential to overcome the von Neumann bottleneck. Due to their nonlinear electrical characteristics and nonvolatile resistance, memristors have been proposed for use in neuromorphic device applications. Bilayered HfO 2 /TiO x -based cognitive memristors are proposed. They demonstrate conductance-modulation capabilit...

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Enhanced resistive switching performance for bilayer HfO₂/TiO₂resistive random access memory

Cited by 58 publications

References 34 publications

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities

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Enhanced resistive switching performance for bilayer HfO2/TiO2resistive random access memory

Cited by 58 publications

References 34 publications

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO2/HfO2 Interface in Flexible Oxide‐Based Resistive Switching Memory

Boosting the performance of resistive switching memory with a transparent ITO electrode using supercritical fluid nitridation

Bilayered Oxide‐Based Cognitive Memristor with Brain‐Inspired Learning Activities

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Enhanced resistive switching performance for bilayer HfO₂/TiO₂resistive random access memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory

Role of Oxygen Vacancies at the TiO₂/HfO₂ Interface in Flexible Oxide‐Based Resistive Switching Memory