Enhanced Thermoelectric Performance of Cu2CdSnSe4 by Mn Doping: Experimental and First Principles Studies

Liu, F. S.; Zheng, Jiaxin; Huang, Menglin; He, Lunhua; Ao, W.Q.; Pan, Feng; Li, J. Q.

doi:10.1038/srep05774

Cited by 39 publications

(27 citation statements)

References 28 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The power factor S 2 σ [24] for CuCd 2 InTe 4 and CuZn 2 InTe 4 is shown in Figure 4c. S 2 σ for CuZn 2 InTe 4 is higher than that of CuCd 2 InTe 4 , a factor of 2 larger than that of Cu 2 CdSnSe 4 , and similar to that of Cu 2 Cd 0.9 Mn 0.1 SnSe 4 [25]. It may be possible to increase S 2 σ in these materials by doping [26] or increasing the Cu content on the 4a site, as is the case for Cu 2 ZnSnSe 4 [8].…”

Section: Resultsmentioning

confidence: 85%

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Nolas

Hassan

Dong

et al. 2016

Journal of Solid State Chemistry

View full text Add to dashboard Cite

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM 2 InTe 4 (M=Zn, Cd), Journal of Solid State Chemistry, http://dx. AbstractQuaternary chalcogenides form a large class of materials that continue to be of interest for energy-related applications. Certain compositions have recently been identified as possessing good thermoelectric properties however these materials typically have the kesterite structure type with limited variation in composition. In this study we report on the structural, optical and electrical properties of the quaternary chalcogenides CuZn 2 InTe 4 and CuCd 2 InTe 4 which crystallize in the modified zinc-blende crystal structure, and compare their properties with that of CuZn 2 InSe 4 . These p-type semiconductors have direct band gaps of about 1 eV resulting in relatively high Seebeck coefficient and resistivity values. This work expands on the research into quaternary chalcogenides with new compositions and structure types in order to further the fundamental investigation of multinary chalcogenides for potential thermoelectrics applications.

show abstract

Section: Resultsmentioning

confidence: 85%

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Nolas

Hassan

Dong

et al. 2016

Journal of Solid State Chemistry

View full text Add to dashboard Cite

show abstract

“…With increasing temperature, both the electric conductivity and Seebeck coefficient increase monotonously; a similar phenomenon has been observed in previous works. [59][60][61] This phase transformation may be the second transformation because there is no obvious endothermic or exothermic effect observed in the differential scanning calorimetry measurement. Currently, the nature of this phase transformation in the TiC 1-x O x @TiO y -TiO 2 system remains unclear, and a detailed structural investigation and analysis is necessary.…”

Section: Resultsmentioning

confidence: 99%

High thermoelectric performance of all-oxide heterostructures with carrier double-barrier filtering effect

Hou

Wei

et al. 2015

NPG Asia Mater

View full text Add to dashboard Cite

Thermoelectric materials can realize significant energy savings by generating electricity from untapped waste heat; however, the coupling of the thermoelectric parameters unfortunately limits their efficiency and practical applications. Herein, rational all-oxide TiC 1-x O x @TiO y -TiO 2 (xo1, 1oyo2) heterostructures with significantly enhanced thermoelectric properties have been designed, and a high dimensionless figure of merit (ZT) value of up to 0.84 at 973 K was achieved in the all-oxide TiC 0.1 O 0.9 @TiO y -TiO 2 heterostructures, which is one of the highest values in n-type oxide bulk thermoelectric materials to date. The TiC 1-x O x @TiO y heterostructures, which include a thin film of approximately 5-10 nm on the surface of TiC 1-x O x compounds prepared by a facile anodization process, exhibit an obvious improvement of the thermoelectric power factor. Furthermore, an excellent dimensionless figure of merit value was obtained in the TiC 1-x O x @TiO y -TiO 2 heterostructures prepared by the anodization process assisted by the sol-gel chemical route, which can be attributed to the decrease in the carrier concentration via the carrier double-barrier filtering effect. This work develops a facile strategy for synthesizing core-shell heterostructures and demonstrates their superior ability to optimize thermoelectric energy harvesting.

show abstract

“…Nanocrystallization is an effective way to reduce the thermal conductivity, but the complex chemical procedure is not suitable for large scale production in commercial applications. Doping by atomic substitutions has been mainly reported of Cd/Zn sites replaced by Cu341920, Mn21 or Fe810, Sn sites by In 722, and Se sites by S6911 to enhance the electrical performance. Among these efforts, Cu-doping at Cd/Zn site is the most effective way till now.…”

mentioning

confidence: 99%

Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Wang

Zheng

et al. 2015

Sci Rep

View full text Add to dashboard Cite

Serials of Ga doping on Sn sites as heterovalent substitution in Cu2CdSnSe4 are prepared by the melting method and the spark plasma sintering (SPS) technique to form Cu2CdSn1-xGaxSe4 (x = 0, 0.025, 0.05, 0.075, 0.01, and 0.125). Massive atomic vacancies are found at x = 0.10 by the heterovalent substitution, which contributes significantly to the increase of electrical conductivity and the decrease of lattice thermal conductivity. The electrical conductivity is increased by about ten times at 300 K after Ga doping. Moreover, the seebeck coefficient only decreases slightly from 310 to 226 μV/K at 723 K, and a significant increase of the power factor is obtained. As a result, a maxium value of 0.27 for the figure of merit (ZT) is obtained at x = 0.10 and at 723 K. Through an ab initio study of the Ga doping effect, we find that the Fermi level of Cu2CdSnSe4 is shifted downward to the valence band, thus improving the hole concentration and enhancing the electrical conductivity at low doping levels. Our experimental and theoretical studies show that a moderate Ga doping on Sn sites is an effective method to improve the thermoelectric performance of Cu2CdSnSe4.

show abstract

Enhanced Thermoelectric Performance of Cu2CdSnSe4 by Mn Doping: Experimental and First Principles Studies

Cited by 39 publications

References 28 publications

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

Synthesis, crystal structure and electrical properties of the tetrahedral quaternary chalcogenides CuM2InTe4 (M=Zn, Cd)

High thermoelectric performance of all-oxide heterostructures with carrier double-barrier filtering effect

Heterovalent Substitution to Enrich Electrical Conductivity in Cu2CdSn1-xGaxSe4 Series for High Thermoelectric Performances

Contact Info

Product

Resources

About