Enhanced Thermoelectric Performance of Cu2SnSe3-Based Composites Incorporated with Nano-Fullerene

Abstract

In this study, nano-sized fullerene C60 powder was sufficiently mixed with Cu2SnSe3 powder by ball milling method, and the C60/Cu2SnSe3 composites were prepared by spark plasma sintering technology. The fullerene C60 distributed uniformly in the form of clusters, and the average cluster size was less than 1 μm. With increasing C60 content, the electrical conductivity of C60/Cu2SnSe3 composites decreased, while the Seebeck coefficient was enhanced. The thermal conductivity of composites decreased significantly, which resulted from the phonon scattering by the C60 clusters located on the grain boundaries of the Cu2SnSe3 matrix. The highest figure of merit ZT of 0.38 was achieved at 700 K for 0.8% C60/Cu2SnSe3 composite.

Enhanced Thermoelectric Properties of Cu3SbSe4 Compounds via Gallium Doping

“…Shi et al calculated the μH of Cu2SnSe3 materials, and the results showed that the μH was about 52 cm 2 V −1 s −1 at room temperature. The similar Hall mobility is possibly related to the similar density of states effective mass [25,26]. Figure 5 demonstrates the Seebeck coefficients for Cu3Sb1−xGaxSe4 (0 ≤ x ≤ 0.015) compounds.…”

Thermoelectric Transport in Nanocomposites

“…Other materials such as manganese silicide based NCs [100] and magnesium silicide based NCs [101,102,103], polycrystalline SnSe embedded with PbTe nanoinclusions [104], Skutterudites CoSb 3 compounds [105] and Yb x Co 4 Sb 12 alloy [106] based NCs, n -type half-Heuslers alloy Hf 0.75 Zr 0.25 NiSn 0.99 Sb 0.01 based NCs [107], p -type half-Heuslers alloy Zr 0.5 Hf 0.5 CoSb 0.8 Sn 0.2 based NCs [108] and Zr 0.25 Hf 0.25 NiSn based NCs [109], BiCuSeO-based NCs [110] and InGaAs alloy embedded with ErAs nanoparticles [111,112] are also studied. Furthermore, some non-TE materials like carbon nanotube [113], C 60 [114,115], graphene [116,117], SiC [118] and platinum nanocrystals [119] are used as nanoconstituents to embed into Bi 2 Te 3 and Sb 2 Te 3 based materials to enhance ZT .…”

Smart materials for changing the electrical properties of nanostructures

“…91 A nano Bi and Te molecule slurry are utilized in a screen-printing strategy to create n-and p-type TE intersection with Ag doping. 92 An upgraded TE execution of Cu 2 SnSe 3 -based composites joined with nanofullerene is presented in Zhao et al 93 The high-temperature TE properties of high virtue Bi-doped Mg2(Si, Sn) are introduced in Farahi et al 94 Plasmawave, TE and bolometric nanofinders with a switchable and controllable working instrument are introduced in Viti et al 95 The warm conductivity of GNRs is diminished by presenting pores in them to improve their TE execution, as introduced in Hossain et al 96 The TE transport properties of p-type Bi 2 Te 3 nanofilms with different quintuple layers (QL) were explored in Zhou and Wang. 98 These properties were dependent on monitoring the abdominal muscle for electronic structure estimations and Boltzmann transport conditions.…”