Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications

babu, R. Sarath; Murthy, Yashaswini; Vinoth, S.; Isaac, R. S. Rimal; Mohanraj, P.; Ganesh, V.; Algarni, H.; AlFaify, S.

doi:10.1016/j.spmi.2021.107097

Cited by 10 publications

(6 citation statements)

References 37 publications

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“…The EQE of an optical device is the parameter that helps to analyze the efficiency of the photodetector in converting the incoming photonic signal into an electrical signal 59 . EQE‐ V plots were obtained (Figure 8D) using the parameters obtained from the I – V characteristics under UV light as a function of light intensity with the help of the following equation 63,82 :

\begin{equation}{rm{EQE}} = \frac{( I_{\mathrm{light}} - I_{\mathrm{dark}})/q}{P /hv}\end{equation}

where h is the Planck constant, and ν is the incident light frequency…”

Section: Resultsmentioning

confidence: 99%

“…The EQE of an optical device is the parameter that helps to analyze the efficiency of the photodetector in converting the incoming photonic signal into an electrical signal. 59 EQE-V plots were obtained (Figure 8D) using the parameters obtained from the I-V characteristics under UV light as a function of light intensity with the help of the following equation 63,82 :…”

Section: Resultsmentioning

confidence: 99%

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Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Yilmaz,

Canpolat,

Aydoğan

2024

J Am Ceram Soc.

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Herein, Ag@ZnO core–shell nanostructures were prepared via the wet chemical method and were then dissolved in methanol and drop cast onto a p–Si wafer. Experimental current–voltage measurements of the Ag@ZnO/p–Si heterojunction device were investigated under both visible and UV illumination of 365 and 395 nm. The photocurrent, responsivity, detectivity, and on/off ratio were found to be dependent on the light intensity of visible light and wavelength of UV light. The low photocurrent at low light intensities and its rapid increase at high light intensities was attributed to the recombination of electrons and holes and also to the presence of traps at low light intensities. The responsivity and detectivity of the photodiode reach 1.32 A/W and 5.47 × 1011 Jones, respectively at 365 nm. On the contrary, the high performance under UV light was explained by the surface plasmon resonance between Ag and ZnO.

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\begin{equation}{rm{EQE}} = \frac{( I_{\mathrm{light}} - I_{\mathrm{dark}})/q}{P /hv}\end{equation}

where h is the Planck constant, and ν is the incident light frequency…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Yilmaz,

Canpolat,

Aydoğan

2024

J Am Ceram Soc.

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“…From the I-V measurements of the device in the dark, the ideality factor (n) and saturation current were determined as 2.9 and 6.08 × 10 −9 A, respectively, using thermionic emission method. Sarath Babu et al [42] obtained the ideality factor 3.4 for p-Si/CdO-Zn-La. Furthermore, Ismail et al [16] calculated as 3.6 for nanostructured CdO/Si heterojunction photodetector while it has been obtained as 3.2 for CdS nanoparticles sensitized CdO diode [27].…”

Section: Resultsmentioning

confidence: 99%

“…Accordingly, the device with a high R value will also have a high EQE value. Figure 7(b) depicts the EQE of the CdO:Se/p-Si heterojunction UV light photodetector using the relation EQE = R hc qλ [42]. Here, h, c, and λ are Planck's constant, the speed of light, and the wavelength of incident light, respectively.…”

Section: Resultsmentioning

confidence: 99%

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Şakar

Orhan

Yıldırım

et al. 2023

J. Phys. D: Appl. Phys.

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Se-doped CdO thin films were prepared on p-Si substrates via spin coating. Morphological, structural and absorption measurements of CdO:Se film was performed. Then, a CdS:Se/p-Si heterojunction was produced by coating CdO:Se film on a p-Si substrate using spin coating method. From the I-V measurements, it has been seen that the device has a very good rectification feature in the dark, at room temperature. In order to investigate the performance of the device under light, a detailed analysis was performed by performing I-V measurements under UV light (365 and 395 nm, 10 mW/cm2) and different intensities of visible light (between 10-125 mW/cm2) as well as ambient light. It was observed that the CdO:Se/p-Si heterojunction performed well under both illumination conditions. The maximum responsivity and specific detectivity values were obtained as 0.72 and 4.47 A/W and 3.31×109 and 2.05×1010 Jones for visible and UV regions, respectively. It was also seen that the device exhibited very high performance and stability even after 160 days.

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“…However, this is not possible in practice. Hereby, based on the Ohm's law, Rs and Rsh can be determined from a graph of junction resistance (Rj= dV i /dI i ) against forward and reverse potentials [60]. From the Rj versus V graph, the Rsh and Rs values are determined from the values where the curves are almost constant at the maximum voltages under reverse and forward bias, respectively.…”

Section: Electrical Analysis Of the Ag/mnpc/gc/ag Photodiodementioning

confidence: 99%

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

et al. 2023

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The aim of this work is to provide an alternative to optoelectronic devices that use carbon and organic materials. To achieve this, we coated a modified MnPc organic semiconductor compound onto a graphite-like carbon (GC) thin film using the thermal evaporation technique, and fabricated an organic-based, highly light-sensitive MnPc/GC hybrid heterojunction. The heterojunction had a transmittance of approximately 60% in the visible region, an absorption coefficient of ~106 m-1, and an energy band gap of 2.6 eV. Subsequently, Ag contacts were grown on the surface of each layer, and the Ag/MnPc/GC/Ag photodiode was subjected to fundamental electrical analysis at various light intensities and a ±3 V applied potential. Analysis in a dark environment revealed that the photodiode had a rectification ratio of 2.59 x 103, a series resistance of 28 Ω, and a shunt resistance of 4.17 x 104 Ω, as calculated from Ohm's law. The diode ideality factor and barrier height of the photodiode were determined from thermionic emission theory to be 5.60 and 0.71 eV, respectively, and it was observed that these decreased with increasing light intensity. The photodetector parameters of the MnPc/GC hybrid photodiode were determined under positive and negative applied potentials at various light intensities. The highest photocurrent, photoconductive responsivity, photosensitivity, and specific detectivity were determined to be 1.512 x 10-1 A, 11.52 A.W-1, 9.83 x 105, and 2.48 x 1012 Jones, respectively, which were significantly higher than those reported in literature for organic and inorganic-based photodiodes. Based on the findings, it was concluded that the Ag/MnPc/GC/Ag photodiode holds promise as an alternative for sensors, solar cells, photodetectors, and optoelectronic communications applications.

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Enhancement in optoelectronic properties of lanthanum co-doped CdO: Zn thin films for TCO applications

Cited by 10 publications

References 37 publications

Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Surface plasmon resonance effects of Ag@ZnO core–shell nanostructure in UV and visible light for photodiode applications

Long‐term stable and high responsivity visible-ultraviolet photodetector of Se-doped CdO film on Si by spin coating

Investigation of fundamental electrical and optoelectronic properties of an organic- and carbon-based MnPc/GC photodiode with high photosensitivity

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