Epitaxial germanium-on-insulator grown on (001) Si

Seo, Jin Won; Dieker, C.; Tapponnier, A.; Marchiori, Chiara; Sousa, Marilyne; Locquet, Jean‐Pierre; Fompeyrine, J.; Ispas, Adriana; Rossel, C.; Panayiotatos, Y.; Sotiropoulos, A.

doi:10.1016/j.mee.2007.04.019

Cited by 38 publications

(21 citation statements)

References 8 publications

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“…The defect structure of the epitaxial Ge(111) film is mostly identical with the one of the epitaxial Si(111) films reported in the following. Before concluding this section, we want to mention to the interested reader that further important work on the integration of 100 % Ge on Si via insulator heterostructures was done by various groups using different oxide buffers, namely mixed La-Y oxides [7], BaTiO 3 /SrTiO 3 double layers [63], SrHfTiO 3 as well as SrHfO 3 [64] etc.…”

Section: Contributed Articlementioning

confidence: 99%

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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Engineered Si wafer systems present an important materials science approach to further improve the performance of Si‐based micro‐ and nanoelectronics. This is due to the potential to integrate alternative semiconductor layers on the mature Si wafer technology platform which are otherwise too expensive or even impossible to grow in bulk form in the required quality and quantity. Ge is attracting increasing research interest because it is for example a promising material for high mobility channel CMOS technologies as well as a mediator material to achieve the manufacturing of III‐V/Si hybrid devices. The integration of Ge on Si wafers is today either achieved by a combination of layer transfer and wafer bonding techniques or by a sequence of subsequent, epitaxial thin film deposition growth steps. In the latter case, the traditional approach to integrate Ge layers of low defect densities is given by the use of compositionally graded SiGe heterostructures. As this approach suffers however from required SiGe buffer thicknesses on the micrometer scale, making integrated circuit processing difficult, research on the development of innovative buffer heteroepitaxy approaches is intensively pursued. A new interesting class of buffer materials with a high degree of flexibility is given by oxide heterostructures. Using the integration of single crystalline Si and Ge on the Si(111) material platform via oxide heterostructures as an example, the flexibility of engineered oxide heterostructures to control important epitaxy parameters is demonstrated. In this study, epitaxial Si(111) and Ge(111) layers were grown on cubic Y2O3(111)/cubic Pr2O3(111)/Si(111) and Pr2O3(111)/Si(111) support systems, respectively. The structural properties of the Si‐on‐Insulator (SOI) and Ge‐on‐Insulator (GOI) heterostructures were characterized in detail by a combination of laboratory‐ and synchrotron‐based methods. As main result, both the epitaxial Si(111) and Ge(111) films were shown to be atomically smooth and single crystalline (i.e. free of stacking twins). Defect engineering approaches need to be applied in future to reduce stacking faults (e.g. microtwins) which are identified as the major defect mechanism in the epitaxial Si(111) and Ge(111) films. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Contributed Articlementioning

confidence: 99%

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Schroeder

Giussani

Dąbrowski

et al. 2009

Phys. Status Solidi (c)

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“…23,24 The same drawback can be noticed in case of LPE. 4 Alternatively, the epitaxy of germanium on crystalline oxides was successively demonstrated by Seo et al 25 on SrHf x Ti x−1 O 3 . The observed defects are mainly stacking faults and twins, separated typically by 200 nm, due to the adaptation of a diamond structure on a perovskite.…”

Section: Structure Analysismentioning

confidence: 99%

Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy

Cammilleri

Yam

Fossard

et al. 2009

Journal of Applied Physics

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In this paper, we present our studies on the growth kinetics of Ge crystals on silicon oxide by nanoscale seed induced lateral epitaxy. We propose a simple and reliable method based on standard local oxidation of silicon technique for creating nanoscale silicon seeds at the edge of thermally grown silicon oxide stripes of desired thickness. The growth of Ge from germane is initiated in the two silicon seed lines and evolves toward a complete wetting of the SiO 2 stripe after coalescence. The wetting mechanism of SiO 2 by Ge is strongly dependent on the seed orientation and closely related to the development of ͕111͖ facets. The coalescence of adjacent Ge crystals results in an improvement in the organization of the initial material. As a result, no defect is visible in the inner part of the structure. The observed defects are arrays of misfit dislocations standing along the seed lines, while only few dislocations are visible through the Ge crystal. Geometric phase analysis of high resolution transmission electron microscopy images and x-ray diffraction reciprocal space maps show that the so-grown Ge crystal stripes on SiO 2 layer are fully relaxed, homogeneous, and fully coherent along their length. The main deviation regarding a perfect epitaxial relation with the silicon substrate is a tilt of Ϯ0.6°around the longitudinal axis of stripe crystals.

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“…[1][2][3] For this purpose, high quality single crystalline Ge layers are grown on alternative high-k dielectric heterostructures on Si. 4,5 Furthermore, GeOI on Si is of interest to achieve the cost-effective monolithic integration of III-V optoelectronic materials on the dominating Si material platform. For instance, GeOI systems are discussed as potential basis for the global integration of high quality GaAs layers on Si.…”

Section: Introductionmentioning

confidence: 99%

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Giussani

Seifarth

Rodenbach

et al. 2008

Journal of Applied Physics

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A combined structure and stoichiometry study on the growth behavior of single crystalline Ge(111) layers on PrO2(111)∕Si(111) heterostructures is presented. Ex situ x-ray diffraction techniques indicate that the interaction between Ge and PrO2(111) results in a complete reduction of the buffer oxide to a cubic Pr2O3(111) film structure. In situ reflection high energy electron diffraction, x-ray and ultraviolet photoelectron spectroscopy studies demonstrate that this chemical reduction of the oxide support occurs during the initial Ge growth stage. The interaction of PrO2 with Ge results in the formation of an amorphous Ge oxide layer by the diffusion of lattice oxygen from the dielectric to the forming semiconductor deposit. After the complete conversion of PrO2 to cubic Pr2O3, the supply of reactive lattice oxygen is exhausted and the continuous Ge deposition reduces the initially formed amorphous GeO2-like film to GeO. The sublimation of volatile GeO uncovers the single crystalline cubic Pr2O3(111) film surface which provides a thermodynamically stable template for elemental Ge heteroepitaxy. A Volmer–Weber growth mode is observed which results after island coalescence in the formation of atomically smooth, single crystalline Ge(111) layers.

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Epitaxial germanium-on-insulator grown on (001) Si

Cited by 38 publications

References 8 publications

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Growth kinetics of Ge crystals on silicon oxide by nanoscale silicon seed induced lateral epitaxy

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

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