Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates

Heikman, S.; Keller, S.; Newman, Scott A.; Wu, Yuan; Moe, Craig G.; Moran, B.; Schmidt, Mathew C.; Mishra, Umesh K.; Speck, James S.; DenBaars, Steven P.

doi:10.1143/jjap.44.l405

Cited by 40 publications

(21 citation statements)

References 25 publications

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“…Maskless ELO by laterally overgrowing a trench instead of a mask material is an alternative avenue to reduce densities of both threading dislocations and cracks. ELO of AlN and high Al-molar fraction AlGaN such as Al 0.96 Ga 0.04 N on sapphire or SiC substrate have been reported by several groups [76,[81][82][83]. Significant reduction in TDD was observed in the areas between ridges.…”

Section: Epitaxial Lateral Overgrowth Of Aln and High Al-molar Fractimentioning

confidence: 70%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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Section: Epitaxial Lateral Overgrowth Of Aln and High Al-molar Fractimentioning

confidence: 70%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

et al. 2017

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“…ELO of AlN and high Al-molar fraction AlGaN such as Al0.96Ga0.04N on sapphire or SiC substrate have been reported by several groups. [72,[77][78][79] Significant reduction in TDD was observed in the areas between ridges. A maximum output power of 2.7 mW under CW operation of 273 nm DUV LEDs on ELO AlN templates with the wing region having TDD of 3×10 8 cm -2 has been reported by Hirayama et al [80] By reducing the TDD in AlN layers on sapphire from 10 10 cm −2 to 10 9 cm −2 , output powers of 1mW and about 4mW for 295 nm and 324 nm LEDs, respectively, have been demonstrated by Kueller et al [69] This method has also been applied for growing AlN template on Si (111) substrate, as illustrated in Figure 7.…”

Section: Epitaxial Lateral Overgrowth Of Aln and High Al-molar Fractimentioning

confidence: 97%

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Ding¹,

Avrutin²,

Özgür³

et al. 2017

Preprint

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Abstract:We overview recent progress in growth aspects of group III-nitride heterostructures for deep ultraviolet (DUV) light-emitting diodes (LEDs), with particular emphasis on the growth approaches for attaining high-quality AlN and high Al-molar fraction AlGaN. The discussion commences with the introduction of the current status of group III-nitride DUV LEDs and the remaining challenges. This segues into discussion of LED designs enabling high device performance followed by the review of advances in the methods for the growth of bulk single crystal AlN intended as a native substrate together with a discussion of its UV transparency. It should be stated, however, that due to the high-cost of bulk AlN substrates at the time of this writing, the growth of DUV LEDs on foreign substrates such as sapphire still dominates the field. On the deposition front, the heteroepitaxial growth approaches incorporate high-temperature metal organic chemical vapor deposition (MOCVD) and pulsed-flow growth, a variant of MOCVD, with the overarching goal of enhancing adatom surface mobility, and thus epitaxial lateral overgrowth which culminates in minimization the effect of lattice-and thermal-mismatches. This is followed by addressing the benefits of pseudomorphic growth of strained high Al-molar fraction AlGaN on AlN. Finally, methods utilized to enhance both p-and n-type conductivity of high Al-molar fraction AlGaN are reviewed.

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“…The ELO growth for AlGaN films has been tried to reduce the dislocation density on sapphire substrates but has been unsuccessful due to the nucleation of polycrystals on the mask material [4]. Although several authors have reported the threading dislocation density reduction in the AlGaN films [1,5,6], the growth of high-quality AlGaN films with low dislocation density remains to be a difficult problem.…”

Section: Introductionmentioning

confidence: 99%

Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

Sumiyoshi¹,

Tsukihara²,

Kataoka³

et al. 2007

Journal of Crystal Growth

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Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates

Cited by 40 publications

References 25 publications

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Status of Growth of Group III-Nitride Heterostructures for Deep Ultraviolet Light-Emitting Diodes

Al0.17Ga0.83N film with middle temperature-intermediate layer grown on trenched sapphire substrate by MOCVD

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