Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

Abstract

Articles you may be interested inInvestigation of the crystallinity of N and Te codoped Zn-polar ZnO films grown by plasma-assisted molecularbeam epitaxy J. Appl. Phys. 108, 093518 (2010); 10.1063/1.3498800 Growth and structural properties of ZnO films on ( 10 − 10 ) m -plane sapphire substrates by plasma-assisted molecular beam epitaxy Lattice relaxation mechanism of ZnO thin films grown on c -Al 2 O 3 substrates by plasma-assisted molecularbeam epitaxy Appl. Phys. Lett. 91, 231904 (2007); 10.1063/1.2813021 Structural characterization of ZnO films grown by molecular beam epitaxy on sapphire with MgO buffer

Controllable growth of dielectric/semiconductor integrated films

“…Ф-scans curves of STO (110) deposited at 700℃ and GaN (10-13) are shown in Figure 3(c), respectively. As it can be seen, the STO (101) peaks and GaN (10)(11)(12)(13) peaks locate at the same position, suggesting that the epitaxial relationship is [1-10] STO// [11][12][13][14][15][16][17][18][19][20] GaN. Both curves show six-fold symmetry, indicating the STO (111) plane with twin-domain structure separated by 180°.…”

“…RHEED patterns of the [1][2][3][4][5][6][7][8][9][10] of STO direction along GaN [11][12][13][14][15][16][17][18][19][20] were observed, and patterns along the of STO direction were observed along GaN direction, as shown in Figure 2(c) and 2(d), respectively. These results indicated that the in-plane epitaxial relationships were [1-10]STO// [11][12][13][14][15][16][17][18][19][20] GaN and STO // GaN. The STO surface was slightly rough indicated by the diffraction spots, suggesting an island growth mode.…”

“…The whole deposition process was in situ monitored by RHEED. The RHEED patterns along GaN [11][12][13][14][15][16][17][18][19][20] and directions prior to STO deposition are shown in Figure 2(a) and 2(b). The diffraction patterns of GaN have clear bright streaks, indicating the GaN surface was smooth without any formation of amorphous layers.…”

“…So the (111) plane is considered to be the lowest energy growth plane for STO deposited on c-plane GaN. A possible epitaxial relationship is (111) [1-10]STO//(0001) [11][12][13][14][15][16][17][18][19][20]GaN, which gives a lattice mismatch about 13%. The lattice mismatch is relatively larger than that epitaxial growth could be obtained [14] .…”

Enhanced near-band-edge emission from a-plane ZnO thin films on SrTiO3 substrates

“…In the first step, ZnO/STO heterostructures may be also useful for alternative multifunctional devices due to the carrier limitation and coupling effect. Previous effort was made to deposit epitaxial ZnO thin films on STO substrates with various orientations [26]; however, open lectures on the optical and electrical properties for in-plane polar ZnO films are still lacking. These motivate us to search for a-ZnO on STO substrates with high performance.…”