EPR on manganese-doped GaAs epitaxial layers

Abstract

Manganese doped GaAs liquid‐phase epitaxial layers provide an EPR spectrum of monoclinic symmetry in contrary to manganese doped GaAs bulk material. It was measured at 1.5 and 20 K. The main axis of disturbance of cubic symmetry has 〈111〉 direction. A MnGa–VAs complex is proposed for interpretation. This model can be justified by the special conditions of preparation and confirmed by the measured values of hyperfine constant and linewidth.