Erratum: “Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films” [J. Appl. Phys. 108, 104513 (2010)]

Panda, Debashis; Dhar, Ankur; Ray, Sumanta

doi:10.1063/1.3596515

Cited by 5 publications

(5 citation statements)

References 0 publications

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“…[1][2][3] RRAM has distinct advantages, such as a fast switching speed, a simple structure, easy fabrication, nonvolatile characteristics, nondestructive readout, and ultimate scalability, which are ensured by complementary metal-oxide-semiconductor technologies. [1][2][3][4][5][6] In particular, transition metal-oxide-based RRAM has been widely used due to its bistable resistive memory switching, simple composition, polycrystalline phase, and controllable stoichiometric formula, which allows specific control of film properties. 7 For practical usage of RRAM, it is important to achieve resistive switching (RS) reliability with low-voltage operation.…”

Section: Introductionmentioning

confidence: 99%

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

et al. 2012

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Resistive random access memory (RRAM) combines the advantages of nonvolatile flash memory and volatile dynamic random access memory, avoiding their drawbacks. For the practical use of RRAM, achieving low-voltage driving is strongly desired. Here we report the effect of Ni nanoparticles on solution-processed NiO based RRAM which can realize a one diode one resistor operation by unipolar resistive switching mode and low-voltage driving for future demands. The Ni nanoparticles not only contributed to high oxygen mobility, but also affected effective insulator thickness reduction, and stoichiometric variation in NiO thin films. Furthermore, the Ni nanoparticle embedded device demonstrated good reliability. These findings can enhance the applicability of RRAM as a next generation memory device.

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Section: Introductionmentioning

confidence: 99%

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

et al. 2012

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“…3(b). I − V curves at 90 K, 100 K, 120 K and 140 K reveal that I increases abruptly after a certain threshold voltage (V T h ) as a result of certain change in conductance [28,10]. The low and high conductance states are generally denoted as OFF and ON states and thus this NiO film may be used as an electrical switch.…”

Section: Electric Transport Propertiesmentioning

confidence: 99%

Electro-Magnetic switching in NiO-Graphene film

Goswami¹,

Chakraborty²,

De³

2022

IOP Conf. Ser.: Mater. Sci. Eng.

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Nickel oxide (NiO) thin film is grown via pulse laser deposition (PLD) technique and it is trapped in between conducting graphene films deposited through the same technique. Epitaxial crystalline growth of both NiO and graphene films are confirmed from X-ray diffraction studies. Raman studies propose creation of pure graphene film with acceptable defects. Electrical transport of the NiO film reveal resistance switching properties for an wide range of temperature which is useful for resistive random access memory (RRAM) and electric-switch. Besides electrical switching, the transport properties of the NiO film depict a systematic response in influence of magnetic field. Resistance of the NiO film changed significantly with external magnetic field which makes the system useful as a magnetic-switch.

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“…и электродов (Pt, Au, Ag, Al, TiN и др. ), говорит в пользу гипотезы Л.Чуа о существовании четвертого базового элемента электрических цепей [24][25][26][27][28][29][30][31][32][33][34][35][36][37][38]. Это стимулирует интерес к поиску механизмов, ответственных за эффекты переключения и памяти в структурах МДМ.…”

Section: мемристор -новый представитель электронной компонентной базыunclassified

On the way to a neuromorphic memristor computer platform

Petrov¹,

Alekseeva²,

Иванов³

et al. 2016

NanoRus

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Интерес к эффектам переключения сопротивления в наноразмерных пленках, как правило, оксидов переходных металлов, возник достаточно давно и стимулирован сравнительно недавней публикацией сотрудников Hewlett-Packard Д.Струкова, Р.C.Вильямса и др. (Nature, 2008), объявивших об обнаружении "неуловимого" мемристора -резистора с памятью (memory resistor), теоретически предсказанного в 1971 году Л.Чуа. Это открыло серьезные перспективы создания резистивной памяти произвольного доступа (ReRAM), в ячейках которой данные сохраняются за счет изменения сопротивления материала, а не электрического заряда. The effects of resistance switching in nanoscale films, as a rule, made of transition metal oxides has long gained considerable interest, which was fostered by a relatively recent publication of Hewlett-Packard's employees, D.Strukov, R.C. Williams, et al. (Nature, 2008), who declared about the discovery of the "ever-elusive" memristor, or memory resistor, which had been theoretically predicted in 1971 by L. Chua. This opened up large prospects for creating resistance based random access memory (ReRAM) with the cells storing data by modifying the resistance of the material rather than an electric charge.

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Erratum: “Nonvolatile and unipolar resistive switching characteristics of pulsed laser ablated NiO films” [J. Appl. Phys. 108, 104513 (2010)]

Cited by 5 publications

References 0 publications

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Low-voltage driving solution-processed nickel oxide based unipolar resistive switching memory with Ni nanoparticles

Electro-Magnetic switching in NiO-Graphene film

On the way to a neuromorphic memristor computer platform

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