ESD-Reliability Enhancement of Circular UHV 300-V Power nLDMOS by the Drain-side Superjunction Structure

Concept and design of super junction devices

“…The CBSLOP LDMOS was proposed to alleviate the SAD effect with a surface SJ layer [56] . The SJ layer provides a low resistance current path, which experimentally realized V B of 500 V and R on of 96 mΩ•cm 2 . Fig.…”

“…The best trade-off between R on and V B is realized by the optimization of the proper doping concentration and structure of the VSL. For the power MOSFET, the R on and V B relationship satisfies the "silicon limit" of R on ∝V B 2.5 [2] . To alleviate this contradiction, Chen X B proposed several methods to introduce the high electric field in the bulk of the device, including a new structure called SJ now [3][4][5] , as shown in Fig.…”

“…The concept of "super junction" was introduced by Fujihira in 1997 [8] . The first realization of the power MOSFET based on the SJ concept was the CoolMOS fabricated in 1998 by Siemens AG, i. e., Infineon now, realizing R on of 35 mΩ•cm 2 for the 600 V device [9] . Because the new device realizes a remarkable R on reduction while keeping almost all of the advantages of the power MOSFET, the SJ has been recognized as the "milestone of the power MOSFET" [10] .…”