Etching action by atomic hydrogen and low temperature silicon epitaxial growth on ECR plasma CVD

Homoepitaxial diamond growth by high-power microwave-plasma chemical vapor deposition

“…In the latter case, as shown with filled triangles in Fig. 1, R LP g is roughly proportional to C 1=2 me when C me p0:15%: Similar nonlinear behaviors have been observed for amorphous silicon films deposited by means of several kinds of plasma-assisted CVD methods under highly hydrogen-diluted conditions [12,13].…”

“…This is because reactions occuring in the MPCVD are more complicated than those in the thermal CVD. For example, in the MPCVD case for amorphous Si growth, highly reactive radicals created in the plasma concerned such as atomic hydrogen, which is not significant in the thermal CVD case, can play an important role in surface etching and resultantly in R g [12,16]. As a matter of fact, a substantial etching of diamond surfaces is evidenced in case of plasma exposure of which main component is pure hydrogen source gas [17].…”

Fine-tuning of the interface in high-quality epitaxial silicon films deposited by plasma-enhanced chemical vapor deposition at 200 °C

“…[1][2][3][4][5][6][7][8][9][10][11] The most used techniques to produce epitaxial silicon (epi-Si) films reported are: rapid thermal vapor phase epitaxy, using substrate temperatures (T S ) of above 850°C, 1 solid phase epitaxy (SPE) using T S of 400°C, 2 ion beam epitaxy using T S of above 500°C, 3 high-vacuum electron cyclotron resonance plasma deposition epitaxy with T S in the range of 450-525°C, 4 ultrahigh vacuum low pressure chemical vapor deposition (UHV-LPCVD) with T S in the range of 700-960°C, 5-7 electron cyclotron resonance plasma CVD (ECR-CVD) using T S as low as 285°C 8 and plasma-enhanced chemical vapor deposition (PECVD) using T S in the range of 150-700°C. [9][10][11] Among the techniques mentioned, PECVD offers several advantages, as the possibility to produce epi-Si films at very low T S (as low as 150°C), without the requirement of ultrahigh vacuum (UHV) systems.…”

SiC-capped nanotip arrays for field emission with ultralow turn-on field

“…The Ar ion from the plasma plays the dominant role in the formation of nanotips by dry physical etching through selective sputtering process while atomic-H, created in high density by the ECR condition, contributes to the dry chemical etching of the silicon surface. Two competing mechanisms, namely the formation of the SiC nanomask on the surface 24 and the preferential etching of the unmasked silicon, 25 coexist during this process and proceed simultaneously in the plasma, forming the nanotips. Microfabricated pure silicon field emitters are inherently chemically reactive.…”