Etude calorimétrique de la rétention de l'eau par les résines novolaques

Weill, A.; Paniez, Patrick Jean; Dechenaux, E.

doi:10.1002/apmc.1984.051220111

Cited by 5 publications

(3 citation statements)

References 3 publications

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“…10) a constant decrease in thickness and hence a continuous loss in weight. Starting with freshly spin-coated resist, it can be shown that the soft bake at 95~ provides a 16% weight loss due to water (16) and solvent evaporation. Increasing temperature up to 200~ shows an additional weight loss of 15% due to residual solvent evaporation and oligomer vaporization (17).…”

Section: Effect Of Weigl~t Loss On Planarization Resultsmentioning

confidence: 99%

Improvement of Photoresist Planarization Properties by Thermal Cure: Role of the PAC

Schiltz¹,

Abraham²,

Dechenaux³

1987

J. Electrochem. Soc.

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Photoresist planarization properties are shown to be improved by a subsequent thermal cure. In order to understand the effects of thermal processing on photoresists, this paper discusses their thermal chemistry in relation to their thermal flow properties. The photoactive compound (PAC) is shown to hinder the thermal flow of the photoresist by ester‐linkage up to the temperature where the resin undergoes complete thermal cross‐linking. Transformation of the PAC by a suitable exposure to UV light will let the resin flow up to its own limits. The thermal flow behavior is shown to be dependent on the feature size. The thickness shrinking due to the loss of weight occurring all along the thermal cure is shown to degrade the planarization properties and to compete with thermal flow.

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Section: Effect Of Weigl~t Loss On Planarization Resultsmentioning

confidence: 99%

Improvement of Photoresist Planarization Properties by Thermal Cure: Role of the PAC

Schiltz¹,

Abraham²,

Dechenaux³

1987

J. Electrochem. Soc.

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“…An effect was observed for the delay between softbake and exposure (Hia) which was unexpected in its magnitude. However, it is believed to be an artefact of the short first level setting employed (5 mm): apparently, insufficient time ( <60 see) was allowed for the water concentration in the wafer to equilibrate with the atmosphere before introducing it into the high vacuum of the exposure chamber [10]. exposed sequentially, such as in an X-ray stepper, the differences in reaction time may require substantially longer holding times of up to 1 h in order to allow the fields exposed last to "catch up" .…”

Section: Identification Of Critical Parametersmentioning

confidence: 99%

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

Eckes¹,

Pawlowski²,

Przybilla³

et al. 1991

Advances in Resist Technology and Processing VIII

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+ European 511kv,, Structures 'ES2,, Zone industrielle, 13016 Rousset adex, France.The effect ofprocess conditions on the pemformnance of the chemically amplified radiation resists AZ PF514 (positive tone) and.AZ PNJJ4 (negative tone) has been examinedfor both X-ray and E-beam application. For the positive tone resist, it is found that mandatory atmospheric holding times for the catalytic reaction can be made redundant be the introduction of a post exposure bake at moderate temperature, yielding high exposure latitude, good linearity amid a reduction of timedependent effects. In particular, metal-ion free developers yield highly vertical resist sidewalls evenfor high overdoses. The sensitivity drfi with increasing residence time in a vacuum (e.g. during E-beam exposure) may be counteracted by a simple DUV flood exposure which moreover may serve to control line shape and wall angle. Enhanced thy-etch stability and linearity may be obtained by means of an optimized DUV hardening process. The negative tone resist AZ PNI14 is shown to be little sensitive to vacuum effects; thermal stability amid dl)' etching properties are found to be superior. Results are presented for X-ray and shaped E-beam exposures.

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“…Courbe exptrimentale de thermogravimttrie de la variation de masse Q ( t ) d'un photoresist HPR 204, dtpost sur de l'aluminium, au cours du temps, A une temptrature de 70°C et exploitation de cette courbe pour dtterminer la valeur du coefficient de diffusion D selon Eq (3). …”

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Cinétique de la diffusion de l'eau dans un film mince de photoresist

Sebillote¹,

Weill²,

Paniez³

1985

Makromol. Chem.

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Diffusion of water molecules in novolak-based photoresist films commonly used in microelectronics is investigated. Thermogravimetry was used, in order to measure the diffusion constants of water molecules for temperatures ranging from 30 to 80°C. It is shown that the time to reach equilibrium with the surrounding atmosphere is only a few seconds for a dry 1 pm thick film of novolak-based positive photoresist.

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Etude calorimétrique de la rétention de l'eau par les résines novolaques

Cited by 5 publications

References 3 publications

Improvement of Photoresist Planarization Properties by Thermal Cure: Role of the PAC

Improvement of Photoresist Planarization Properties by Thermal Cure: Role of the PAC

<title>Process latitude for the chemical amplification resists AZ PF514 and AZ PN114</title>

Cinétique de la diffusion de l'eau dans un film mince de photoresist

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