EV Traction Inverter Employing Double-Sided Direct-Cooling Technology with SiC Power Device

Hirao, Takashi; Onishi, Masami; Yasuda, Yusuke; Namba, Akihiro; Nakatsu, Kinya

doi:10.23919/ipec.2018.8507756

Cited by 11 publications

(8 citation statements)

References 3 publications

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“…A chip-connecting structure was built to provide an isometric current pattern, leading to a reduction in the current deviation between each chip from 10% to 2%. As a result, the overall design was able to reduce power losses by 60% in comparison to the conventional single-side cooled silicon modules [76].…”

Section: Other Promising Cooling Approachesmentioning

confidence: 98%

“…In single-sided cooling, the power module is cooled only from one side. The standard single-sided cooling method uses a power module with a cold plate attached to the base plate trough the thermal interface materials [75,76]. Double-sided cooling involves changing the module construction in such a man ner that two substrates are assembled one above the other with the power devices embed ded between them [77].…”

Section: Classification Of Existing Cooling Techniquesmentioning

confidence: 99%

“…The double-sided design allows the cooling efficiency to be in creased because twice as much heat can be dissipated [28,78]. In addition, the bonding wires inside the module can be eliminated, which improves reliability [76]. The double sided technique can be an efficient solution because the dissipation of power from both o the semiconductor's surfaces leads to a reduction in thermal impedance of up to 30% [79] (a) (b) The cold plate configuration, when applicable, can affect the heat dissipation capa bility of a power module.…”

Section: Classification Of Existing Cooling Techniquesmentioning

confidence: 99%

“…In addition, power modules with double-sided cooling have higher reliability due to the replacement of the bonding wires by more reliable interconnectors. Furthermore, the double-sided power module can be designed for an optimized current path between parallel modules [76].…”

mentioning

confidence: 99%

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A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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The development of electric vehicles (EVs) is an important step towards clean and green cities. An electric powertrain provides power to the vehicle and consists of a charger, a battery, an inverter, and a motor as the main components. Supplied by a battery pack, the automotive inverter manages the power of the motor. EVs require a highly efficient inverter, which satisfies low cost, size, and weight requirements. One approach to meeting these requirements is to use the new wide-bandgap (WBG) semiconductors, which are being widely investigated in the industry as an alternative to silicon switches. WBG devices have superior intrinsic properties, such as high thermal flux, of up to 120 W/cm2 (on average); junction temperature of 175–200 °C; blocking voltage limit of about 6.5 kV; switching frequency about 20-fold higher than that of Si; and up to 73% lower switching losses with a lower conduction voltage drop. This study presents a review of WBG-based inverter cooling systems to investigate trends in cooling techniques and changes associated with the use of WBG devices. The aim is to consider suitable cooling techniques for WBG inverters at different power levels.

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Section: Other Promising Cooling Approachesmentioning

confidence: 98%

Section: Classification Of Existing Cooling Techniquesmentioning

confidence: 99%

Section: Classification Of Existing Cooling Techniquesmentioning

confidence: 99%

mentioning

confidence: 99%

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A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

et al. 2021

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“…Minimizing Lpara value for GaN devices is presented in [5]. Moreover, the packaging of the SiC power module by using new materials and cooling structures is presented in [6], [7], respectively. Comparison of using WBG devices for dc-dc converters is implemented in [8].…”

Section: Wide-bandgap Power Semiconductors For Electric Vehiclementioning

confidence: 99%

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Thang

Trovão²,

et al. 2021

IEEE Veh. Technol. Mag.

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In recent years, researchers have been attracted towards the application of Wide-Bandgap (WBG) power semiconductor devices such as Silicon Carbide (SiC) and Gallium Nitride (GaN) in Electric Vehicle (EV) applications. Their advantages over Silicon (Si) power semiconductors are lower power losses, higher switching frequencies and higher junction temperatures. Thus, the usage of WBG power semiconductor devices for EV power electronic systems is to improve EV efficiency, reliability, and mileage. However, these adoptions are still under challenges in terms of packaging and power converters design. In this paper, future trends and prospects of using WBG power semiconductor devices in EV systems are first presented. Then, recent progress of different commercial WBG power semiconductor devices are reviewed and different solutions in order to solve the research and development challenges are evaluated.

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Design and simulation of a silicon carbide power module with double‐sided cooling and no wire bonding

Tan,

Zeng,

Yang

et al. 2024

Electrical Materials and Applications

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This paper presents a novel 1200 V/81 A double‐sided cooling (DSC) half‐bridge module; this module consists of two SiC MOSFETs bare die, AlN‐DBC substrates, three types of metals spacers, power and signal terminals. The bonding wire is eliminated completely in this proposed module as two patterned spacers are used in the connected gate and source pad. This structure can reduce the parasitic parameters and allow the conduction of heat dissipation through top and bottom chips. The simulations of parasitic parameters and thermal resistance are carried out by ANSYS Q3D extractor and COMSOL Multiphysics. Results show that the proposed module has a low parasitic inductance of 4.22 and 5.41 nH in both the gate and power loop. The junction temperature is reduced by 30% under the same power loss. Prototypes of the module lay out and fabrication process are presented for the proposed module. Static experiments validated the design.

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EV Traction Inverter Employing Double-Sided Direct-Cooling Technology with SiC Power Device

Cited by 11 publications

References 3 publications

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

A Thorough Review of Cooling Concepts and Thermal Management Techniques for Automotive WBG Inverters: Topology, Technology and Integration Level

Wide-Bandgap Power Semiconductors for Electric Vehicle Systems: Challenges and Trends

Design and simulation of a silicon carbide power module with double‐sided cooling and no wire bonding

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