Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics

Abstract

Both circular and rectangular Ni Schottky contacts on AlGaN/AlN/GaN heterostructures have been fabricated. Both of the Schottky barrier heights were measured by internal photoemission. The flat-band voltage (V0) for the AlGaN/AlN/GaN heterostructure Schottky contacts was analyzed and obtained from the forward current-voltage (I-V) characteristics. Based on the forward I-V characteristics and with the obtained flat-band voltage, the Schottky barrier heights for the circular and rectangular diodes have been analyzed and calculated by self-consistently solving Schrodinger’s and Poisson’s equations. The evaluated Schottky barrier heights for the prepared circular and rectangular Ni Schottky diodes agree well with the photocurrent measured results.

Effect of N2O/BCl3Cyclical Recess Etching Technique Used Prior to Anode Metal Deposition in AlGaN/GaN Schottky Barrier Diodes

“…17,18 In this study, n decreases as the temperature increases, and SBH increases as the temperature increases, which is consistent with thermionic emission. [18][19][20] The reversed I-V characteristics of the devices for 300 and 400 K operation are illustrated in Figure 4. The reversed currents of the SBDs at 300 K for structures A, B, C, and D were 2.10 × 10 −5 , 2.21 × 10 −5 , 1.18 × 10 −4 , and 1.94 × 10 −4 mA/mm at a -20 V bias, respectively.…”

Effects of post-annealed floating gate on the performance of AlGaN/GaN heterostructure field-effect transistors

“…The V 0 and n 1 can be obtained from the forward I-V characteristics of the gate-source Schottky diode. [21,22] The forward I-V characteristics of the gate Schottky contacts for the four samples after FG 600 • C RTA are measured as shown in Fig. 7.…”

Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor

“…Based on the measured C-V curves and the forward I-V characteristics of the gate and source contacts for the prepared AlGaN/AlN/GaN HFETs, the polarization charge densities under the gate contacts (ρ G ) corresponding to different gate voltages can be calculated by self-consistently solving Schrödinger's and Poisson's equations, [10] the results are listed in Table 1 The Schottky barrier height (φ b ) used for this calculation can also be calculated from the measured C-V curves and the forward I-V characteristics of the gate and source contacts by self-consistently solving Schrödinger's and Poisson's equations, [11] the results are also shown in Table 1. The details of the above calculation can be found in Refs.…”