lifetime, [1][2][3] high stability, [4] and application flexibility. [5] The ones with an emission wavelength of ≈250 nm exhibit the predominant advantage of sterilization, especially for inactivating Bacillus subtilis spores. [6][7][8] Unfortunately, the LEDs with shorter emission wavelength (≤250 nm) present terrible wall-plug-efficiency (WPE), which is less than 1%, [1][2][3] due to poor hole injection efficiency, [9] strong quantum-confined Stark effect (QCSE), [10][11][12][13][14][15][16] and p-GaN electrode induced UV-absorption. [17][18][19][20][21] Moreover, such low WPE results in a huge amount of heat at a large injection current and hinders the device's reliability, thus obstructing the fabrication of a highpower-density integrated UV light source.In order to disregard the above-mentioned issues, the electron beam-pumped deep-ultraviolet surface emitter (DUVSE) is proposed to increase the output power and avoid the conventional carrier injection layers. [22][23][24][25][26][27][28] The device merely consists of a carbon nanotube (CNT) field emitter and AlGaN multiple quantum wells (MQWs). This DUVSE announces plenty of advantages such as low emitted light re-absorption, [24] simple epitaxial structure, [23] and solo-device fabrication at wafer-scale. [22] In A 2-inch wafer-scale electron-beam (e-beam) pumped deep-ultraviolet surface emitter (DUVSE) with high efficiency and high output power at an emission wavelength of 248 nm is reported. This DUVSE benefits from ultra-thin staggered AlN/AlGaN/GaN multiple quantum wells (MQWs), which compromise the electron-hole overlap and carrier confinement and thus significantly improve the emission efficiency. The wall-plug-efficiency (WPE) is increased by six times to 5.25% in comparison to that of conventional DUV lightemitting devices (LEDs) based on AlGaN MQWs. This WPE is achieved under an anode voltage and current of 8 kV and 1 mA, where the output power is 420 mW. This output power can be further enhanced to 702 mW by increasing the anode current to 3 mA. The enhanced WPE and uniform electron beam distribution lighten the avenue to achieve a wafer-scale high power dense DUV light source, which is a challenge for conventional DUV-LEDs, in particular with an emission wavelength of less than 250 nm.