Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at λ=193nm

Tabery, Cyrus; Spence, Christopher A.

doi:10.1117/12.435743

Cited by 7 publications

(6 citation statements)

References 2 publications

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“…The intensity ratios which were calculated by the SOLID-CM program agree quite well with those experimentally obtained; however, the predicted modulation of the aerial image intensity is significantly larger than that which is actually measured. This has been previously observed 5 and may reflect more upon the limitations of MSM193 metrology instrument (alignment, aberrations, scattering) than upon any intrinsic error in the simulation. …”

Section: Analysis Of a Repairmentioning

confidence: 79%

Application of mask simulation to mask repair

Musil¹,

Stewart²,

Clark³

2002

SPIE Proceedings

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The repair of an opaque defect by focused ion beam milling is compromised by non-idealities of the repair process, which include an error in the placement of the repaired edge, over-etching and implantation of gallium into the quartz substrate, and the re-deposition of sputtered material. Through the application of the mask simulation software SOLID-CM™ (Sigma-C GmbH), the relative influence of these repair artifacts upon the aerial image of a line array after the removal of a line-edge defect on a binary mask was simulated under conditions commensurate with the 100-nm lithography node. From these simulations, we conclude that the repair process would benefit most from an enhancement in the repeatability of edge-placement and from a reduction in the Ga stain. Additional modeling was performed on the tradeoff between the improvement in transmission afforded by the removal of the Ga-stained quartz versus the reduction in light as a consequence of increased scattering by the addition of quartz damage. For the feature size investigated, the aerial image was not improved through the substitution of stained quartz with air. In summary, the simulation of the aerial image after the repair of an opaque defect can greatly aid and guide process development.

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Section: Analysis Of a Repairmentioning

confidence: 79%

Application of mask simulation to mask repair

Musil¹,

Stewart²,

Clark³

2002

SPIE Proceedings

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“…The sPSM topography effect results in the intensity imbalance ( fig.1c) due to light scattering at sidewalls and edges of the 180-phase openings [1]. Rigorous 3-D electromagnetic simulation of the sPSM shows up to 25% of the relative intensity loss between 0-and 180-phases [2,3]. By assigning different transmission levels to 0-phase (equal to 1) and to 180-phase (equal to PI) the sPSM intensity imbalance can be simulated.…”

Section: Introductionmentioning

confidence: 96%

Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors

Belova¹,

Jensen²,

Croffie³

et al. 2004

SPIE Proceedings

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A methodology and a Monte Carlo simulation flow with integrated LSI Logicís OPC package, Molotof, was applied to the 65nm poly line sensitivity analysis. Strong phase shift mask (sPSM) manufacturing specifications were optimized to obtain image critical dimensions (CD) and image placement errors (IPE) complying with technology design rules. Reticle manufacturing statistical errors of phase depth, phase width, and phase intensity imbalance were used to generate a virtual sPSM for imaging poly lines. A criterion for qualifying reticle specification is to obtain all latent image CDs and IPEs within a design rule allowed range for a given mask specification. The approach allows for computing reticle and litho budgets into CD imaging performance. We present simulation and empirical results of statistical analysis of the 65nm poly line (clear field) printability, and a method for optimizing a strong phase shift reticle specification. Sensitivity to a single parameter variation and full statistical analysis of the 65nm poly line imaging performance affected by manufacturing errors is presented. The optimum reticle specification, yielded 100% of critical dimensions and image placement errors, was found in simulation and confirmed by empirical data.

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“…Current issues such as image intensity imbalance, aberration sensitivity and mask defects have placed a challenge on the design of alternating PSM [1][2][3]. Aberration is the departure of light ray propagation from paraxial optics.…”

Section: Introductionmentioning

confidence: 99%

The analysis of the criteria of phase error by evaluating the influence of lens aberration on the lithographic performance

Jeong

Ahn

Park

et al. 2005

Optical Microlithography XVIII

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We investigated the influence of lens aberration on the lithographic performance according to the phase error and topography effects of phase-shift mask (PSM). Twin-bar and isolated pattern showing high sensitivity to lens aberration were used for this study. The simulation of aberrated images was carried out using the Solid-CTM simulator. Specially, we quantified the relationship between patterning behaviors such as the isofocal tilt, the left-right (L-R) CD difference and the Z7 and Z9 individual Zernike coefficients. Isofocal tilt aberration sensitivity for Z9 was 0.4nm/nm, which resulted in 2nm CD variation using lens with 5nm Z9 value. When using the lens with 5nm Z7 value, the L-R CD difference and its sensitivity are 10nm and 2nm/nm, respectively. Finally, we evaluated the patterning performance by phase error effect, and determined the phase error criteria for PSM. The pattern placement error was increased by increasing phase error as well as Z7 value, while its slope to the defocus was similar regardless of lens aberration. However, it was found that the aberration sensitivity was not affected by phase error. The simulation predicted that the sensitivity of lens aberration could be increased due to mask topography effect. The nominal shift of phase edge attributed to mask topography was measured.

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Evaluation of 3D alternating PSM structures using mask topography simulation, and AIMS at λ=193nm

Cited by 7 publications

References 2 publications

Application of mask simulation to mask repair

Application of mask simulation to mask repair

Sensitivity of the 65-nm poly line printability to sPSM manufacturing errors

The analysis of the criteria of phase error by evaluating the influence of lens aberration on the lithographic performance

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