Evaluation of a 1200-V, 800-A All-SiC Dual Module

Wood, Robert A.; Salem, Thomas E.

doi:10.1109/tpel.2011.2108670

Cited by 113 publications

(38 citation statements)

References 12 publications

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“…Switching performance evaluation of Si and SiC for avionic applications in [9] shows that SiC devices have ten times less switching losses in comparison to Si devices for given operating conditions. Different SiC power modules have been designed and presented in literature [7,10,11]. A 1200V, 800A SiC dual power module for electric vehicle applications, which incorporates twenty 80A SiC MOSFETs and twenty 50A SiC Schottky diodes, is evaluated in [10].…”

Section: Introductionmentioning

confidence: 99%

“…Different SiC power modules have been designed and presented in literature [7,10,11]. A 1200V, 800A SiC dual power module for electric vehicle applications, which incorporates twenty 80A SiC MOSFETs and twenty 50A SiC Schottky diodes, is evaluated in [10]. The module shows the parallel operation capability of SiC MOSFETs and Schottky diodes with peak loading of 900A, 600V DC bus.…”

Section: Introductionmentioning

confidence: 99%

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Testing of a Lightweight SiC Power Module for Avionic Applications

Gurpinar

Lopez-Arevalo

et al. 2014

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

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Functional and performance tests of a three-phase, two-level power module based on CREE 1.2kV SiC MOSFETs for avionic applications is presented in this paper. SiC devices have superior properties over conventional Si devices at high voltage operations and these properties make SiC devices attractive for avionic industry in order to reduce size of power electronic converters while maintaining high efficiency. This paper starts with a brief explanation of thermo-mechanical design approach of SiC power module. Thermo-mechanical design is followed by test setup and experimental results for different load and switching frequency conditions. The module is tested up to 540V DC link voltage, 6kW output power with 100kHz switching frequency. Experimental results show that the module can be successfully operated with high efficiency at high switching frequencies.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Testing of a Lightweight SiC Power Module for Avionic Applications

Gurpinar

Lopez-Arevalo

et al. 2014

7th IET International Conference on Power Electronics, Machines and Drives (PEMD 2014)

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“…These characteristics are expected to be utilized in EV/HEV applications [1,2]. References [3,4,5] developed high power density and high operating temperature SiC modules. High-Frequency switching operation allows to use less inductance and capacitance in power conversion circuits [6], but high di/dt in fast switching induces large surge voltage with the parasitic inductance in the circuit wiring.…”

Section: Introductionmentioning

confidence: 99%

Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor

Fukunaga

Funaki

2017

IEICE Electron. Express

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Fast switching capability of SiC power devices enables the downsizing of power conversion circuits by high-frequency switching operation. However, high di/dt in fast switching operation for high-frequency switching induces surge voltage. This paper developed low-inductance power module substrate with snubber capacitor directly attached on the substrate to suppress surge voltage in fast switching, and validated the performance of the developed SiC half-bridge power module. The surge voltage was suppressed less than 1/10 of the conventional power module configuration for same switching speed.

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“…Recent demonstrations show that SiC transistors can attain outstanding properties such as higher electron density, lower drain-to-source onresistance, lower thermal resistance, and higher breakdown voltage in comparison to silicon (Si) counterparts [5][6][7][8][9][10]. Although much progress has been achieved in the development of new power devices, power converters that employ SiC transistors have not become commercially available, because device performance issues under switching operation have not been sufficiently discussed yet [11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…In addition, to evaluate a power switch under actual switching operation [5,20,21], the extreme conditions (e.g., high voltage and high current) should be implemented. Unfortunately, simultaneously high voltage and current power supply (e.g., 400V/50A) in a test laboratory are difficult due to the limited capacity of power installation.…”

Section: Introductionmentioning

confidence: 99%

A Novel Circuit for Characteristics Measurement of SiC Transistors

Cao¹,

Kim²

2014

Journal of Electrical Engineering and Technology

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-This paper proposes a novel test circuit for SiC transistors. On-state resistance under practical application conditions is an important characteristic for the device reliability and conduction efficiency of SiC transistors. In order to measure the on-state resistance in practical applications, high voltage is needed, and high current is also necessary to ignite performance for the devices. A softswitching circuit based on synchronous buck topology is developed in this paper. To provide highvoltage and high-current stresses for the devices without additional spikes and oscillations, a resonant circuit has been introduced. Using the novel circuit technology, soft-switching can be successfully realized for all the switches. Furthermore, in order to achieve accurate measurement of on-state resistance under switching operations, an active clamp circuit is employed. Operation principle and design analysis of the circuit are discussed. The dynamic measurement method is illustrated in detail. Simulation and experiments were carried out to verify the feasibility of the circuit. A special test circuit has been developed and built. Experimental results confirm that the proposed circuit gives a good insight of the devices performance in real applications.

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Evaluation of a 1200-V, 800-A All-SiC Dual Module

Cited by 113 publications

References 12 publications

Testing of a Lightweight SiC Power Module for Avionic Applications

Testing of a Lightweight SiC Power Module for Avionic Applications

Switching surge voltage suppression in SiC half-bridge module with double side conducting ceramic substrate and snubber capacitor

A Novel Circuit for Characteristics Measurement of SiC Transistors

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