Experimental and analytical study of saturation current density of laser-doped phosphorus emitters for silicon solar cells

Paviet‐Salomon, Bertrand; Gall, S.; Monna, R.; Manuel, S.; Slaoui, A.

doi:10.1016/j.solmat.2011.03.001

Cited by 20 publications

(4 citation statements)

References 15 publications

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“…The measured ranges of the resistance and sheet resistance are 100-450 Ω and 60-220 Ω/◻, respectively. A diffusion temperature of 1000-1150 ∘ C could grow a P-N junction with sheet resistance within the scope of the ideal P-N junction surface sheet resistance 60-200 Ω/◻ [28][29][30]. Samples with P-N junction growth enabled by diffusion temperatures of 1000-1150 ∘ C were used for further cell fabrication.…”

Section: Sheet Resistance Measurementsmentioning

confidence: 99%

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Liu

Wang

2014

International Journal of Photoenergy

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The object of this paper is to develop a high antireflection silicon solar cell. A novel two-stage metal-assisted etching (MAE) method is proposed for the fabrication of an antireflective layer of a micronanohybrid structure array. The processing time for the etching on an N-type high-resistance (NH) silicon wafer can be controlled to around 5 min. The resulting micronanohybrid structure array can achieve an average reflectivity of 1.21% for a light spectrum of 200–1000 nm. A P-N junction on the fabricated micronanohybrid structure array is formed using a low-cost liquid diffusion source. A high antireflection silicon solar cell with an average efficiency of 13.1% can be achieved. Compared with a conventional pyramid structure solar cell, the shorted circuit current of the proposed solar cell is increased by 73%. The major advantage of the two-stage MAE process is that a high antireflective silicon substrate can be fabricated cost-effectively in a relatively short time. The proposed method is feasible for the mass production of low-cost solar cells.

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Section: Sheet Resistance Measurementsmentioning

confidence: 99%

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Liu

Wang

2014

International Journal of Photoenergy

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“…19 Reduced recombination by a lightly doped emitter results in higher V oc and J sc values and lowers the collection losses of photogenerated carriers. Although the conventional selectiveemitter process in crystalline Si solar cells requires multiple doping steps with photomask alignments, [20][21][22] we developed a facile etch-back approach to integrate a self-aligned selective emitter onto a degenerately doped, Si NW solar cell. Robust Ohmic contacts integrated with lightly doped antireective Si NWs were obtained using one-step thermal diffusion.…”

Section: Introductionmentioning

confidence: 99%

Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

Park

Jung

et al. 2014

Nanoscale

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Formation of a selective emitter in crystalline silicon solar cells improves photovoltaic conversion efficiency by decoupling emitter regions for light absorption (moderately doped) and metallization (degenerately doped). However, use of a selective emitter in silicon nanowire (Si NW) solar cells is technologically challenging because of difficulties in forming robust Ohmic contacts that interface directly with the top-ends of nanowires. Here we describe a self-aligned selective emitter successfully integrated into an antireflective Si NW solar cell. By one-step metal-assisted chemical etching, NW arrays formed only at light-absorbing areas between top-metal grids while selectively retaining Ohmic contact regions underneath the metal grids. We observed a remarkable ∼40% enhancement in blue responses of internal quantum efficiency, corresponding to a conversion efficiency of 12.8% in comparison to the 8.05% of a conventional NW solar cell.

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“…These doped regions can act as emitters, back-surface fields (BSFs), and floating junctions in solar cell structures. [1][2][3][4][5][6][7][8] LD can be performed in an ambient atmosphere at room temperature. In LD, only the irradiated area is heated and impurities diffuse to the substrate without thermal damage.…”

Section: Introductionmentioning

confidence: 99%

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

Nishimura¹,

Okamura²,

Yamamoto³

et al. 2014

Jpn. J. Appl. Phys.

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Increasing energy conversion efficiency without any extra cost is required for crystalline silicon (c-Si) solar cells. Laser doping (LD) can meet these requirements because it can be performed in an ambient atmosphere at room temperature. In this study, spin-coated phosphorus silicate glass (PSG) was formed on textured c-Si as a precursor for LD. We found that after LD, the reinforcement of the interface between PSG and the Si surface improved the photovoltaic characteristics V oc and J sc. The interface was reinforced by changing the c-Si surface from hydrophobic to hydrophilic before spin coating. The reinforced interface led to a reduction in the number of surface voids and an enhancement of the transfer of dopant atoms.

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Experimental and analytical study of saturation current density of laser-doped phosphorus emitters for silicon solar cells

Cited by 20 publications

References 15 publications

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Superior Antireflection Coating for a Silicon Cell with a Micronanohybrid Structure

Incorporation of a self-aligned selective emitter to realize highly efficient (12.8%) Si nanowire solar cells

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

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