Experimental evaluation of microwave field-effect-transistor noise models

Heymann, P.; Rudolph, Matthias; Prinzler, H.; Doerner, Ralf; Klapproth, L.; Böck, Georg

doi:10.1109/22.744290

Cited by 35 publications

(16 citation statements)

References 15 publications

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“…(9)-(11) and the results are shown in Figure 5. In general P and R have the tendency to decrease with increasing frequency in agreement with the results reported by Heymann et al [2]. P ranges from 0.8 to 1.3 and R is close to 0.01 ϳ 0.3 for devices biased at 30% I dss .…”

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confidence: 90%

“…The study of indoor narrowband radio channels can be performed from the perspective of the spatial variations, or the envelope variations of the received signal depending on the space or the position of the mobile terminal [1,2]. However, even when both antennas remain fixed, the movement of people and equipment or machinery which normally takes place in this type of scenarios gives rise to multipath fading phenomena, which are called temporal fading or temporal variations.…”

Section: Introductionmentioning

confidence: 99%

“…However, usually very little information of these noise coefficients is provided to circuit designers because it either involves special experimental set-up [1] or complicated noise parameter transformation [2] to obtain the noise coefficients. On the other hand, two port noise parameters measured by automated noise measurement system such as the popular ATN NP5 noise parameter analyzers are usually available to circuit designers.…”

Section: Introductionmentioning

confidence: 99%

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A simple method for the determination of noise coefficients P, R, and C by two port noise parameters

Chen

Wang

2002

Micro & Optical Tech Letters

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INTRODUCTIONIt is well known that the values of noise coefficients P, R, and C are very crucial in the determination of the noise figures of low noise amplifiers (LNA)/mixers and the phase noises of voltage control oscillators (VCO). However, usually very little information of these noise coefficients is provided to circuit designers because it either involves special experimental set-up [1] or complicated noise parameter transformation [2] to obtain the noise coefficients. On the other hand, two port noise parameters measured by automated noise measurement system such as the popular ATN NP5 noise parameter analyzers are usually available to circuit designers. Hence, there is a need to have a handy method that can extract noise coefficients P, R, and C directly from the standard measured noise parameters F min , R N and ⌫ opt (or R opt and X opt ).In this paper, we present a simple method for the determination of noise coefficients by the measured noise parameters. The relation between equivalent noise R N and equivalent noise conductance g n was derived to simplify the extraction procedure. The noise parameters of 0.15 m InGaAs PHEMTs with three different device sizes at two different biases were measured on wafer using an automated NP5 measurement system from ATN Microwave Inc. Excellent agreement has been found between the measured noise parameters and calculated noise parameters using extracted noise coefficients P, R, and C. A discussion of the dependence of P, R, and C on the device size and bias condition is also included. THEORYThe general noise equivalent circuit of an FET is shown in Figure 1. According to Pucel's FET noise model [3], the dimensionless noise coefficients P, R, and C are defined bywhere i d is the drain current noise and i g is the induced gate noise. By a straightforward circuit analysis, the noise figure F of the FET can be put in the formwhere the four noise parameters F min , g n , R opt , and X opt are given by and K g , K c and K r are defined byFukui [4] has written the noise figure F of an FET in the following formComparing Eqs. (4) and (12) in [3,4], we further conclude that the following relation must holdNow we are ready to make use the measured noise parameters to calculate P, R, and C directly. Since R N , R opt , and X opt can be measured, g n and thus K g (see Eq. (6) once K g and K c are known. From Eqs. (9)- (11), P, R, and C can be obtained. EXPERIMENTAL RESULTS AND DISCUSSIONSThe noise parameters of 0.15 m InGaAs PHEMT's with three different sizes (gate width ϭ 100 m, 150 m, and 200 m) at two different bias conditions (peak g m and 30% I dss ϭ 100 mA/mm) were measured on-wafer by an automated measurement system NP5 from ATN microwave Incorporation. Drain voltage was fixed at 3V and the frequency range covers from 4 GHz to 24 GHz. The extracted K g , K r , and K c of the devices with different sizes biased at their 30% I dss are plotted as functions of frequency in Figure 2. Similar characteristics are also found when the devices are biased at higher current (peak g m...

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confidence: 90%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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A simple method for the determination of noise coefficients P, R, and C by two port noise parameters

Chen

Wang

2002

Micro & Optical Tech Letters

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“…However, this model has been found unsatisfactory accuracy in certain simulation [6], the main limitations are due to omitting the frequency dispersion of the noise model parameters [7]. The gate leakage current has not been taken into account in PRC model and, therefore an additional shot noise source is necessary in parallel with the gate induced noise source at the input port [8].…”

Section: Introductionmentioning

confidence: 99%

Microwave noise modeling for PHEMT using artificial neural network technique

Gao

Zhang

2009

Int J RF and Microwave Comp Aid Eng

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An improved noise model for pseudomorphic high electron mobility transistors (PHEMT) based on the combination of the artificial neural network (ANN) and conventional equivalent circuit modeling technique is presented. The frequency dispersion of the gate noise model parameter P, drain noise model parameter R, and the correlation coefficient C have been taken into account by using an ANN model. The influence of the gate leakage current can be accommodated by using the proposed noise model. The noise model parameters are determined directly from on wafer noise parameters measurement based on the noise correlation matrix technique. Good prediction for noise parameters and significant improvements of the accuracy of noise parameters are obtained up to 26 GHz for 2 3 40 lm gate width (number of gate fingers 3 unit gate width) 0.25 lm Double Heterojunction d-doped PHEMTs over a wide range of bias points.

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“…Since the AlGaAs/InGaAs/GaAs pseudomorphic HEMT [1,2] is widely used as an active device in low-noise amplifiers in microwave frequencies, it is of primary importance to have a precise model in order to predict the exact noise behavior and microwave performance. Several efforts [3][4][5] have been made to develop a simple and accurate measurement technique for extraction of the noise model, which require a minimum number of measured parameters for the prediction of the noise performance of the device. Different analytical noise models [6 -12] have also been developed, however, all of them have neglected the effect of gate-to-drain capacitance.…”

Section: Introductionmentioning

confidence: 99%