Experimental-Numerical Comparison of the Cantilever MEMS Frequency Shift in presence of a Residual Stress Gradient

Ballestra, Alberto; Somà, Aurelio; Pavanello, Renato

doi:10.3390/s8020767

Cited by 21 publications

(13 citation statements)

References 23 publications

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“…can be used, and therefore, the effect of the cantilever width can be neglected. 42 We can see from Eq. (2) that the vertical deflection is directly affected by the cantilever length (l).…”

Section: B Cantilever Geometrymentioning

confidence: 96%

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Kermany

Iacopi

2015

Journal of Applied Physics

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We introduce a simple methodology to predict and tailor the intrinsic bending of a cantilever made of a single thin film of hetero-epitaxial silicon carbide grown on silicon. The combination of our novel method for the depth profiling of residual stress with a few nm resolution with finite element modelling allows for the prediction of the bending behaviour with great accuracy. We also demonstrate experimentally that a silicon carbide cantilever made of one distinct film type can be engineered to obtain the desired degree of either upward, flat, or downward bending, by selecting the appropriate thickness and cantilever geometry. A precise control of cantilever bending is crucial for MEMS applications such as micro-actuators, micro-switches, and resonant sensors. I. INTRODUCTION Epitaxial cubic silicon carbide (3C-SiC) is a leading material for micro electrical mechanical systems (MEMS) due to its excellent mechanical properties when silicon (Si) has limitations. 1-4 Furthermore, it can be grown on Si substrate which results in large area, easy micromachining, and low cost production.

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“…can be used, and therefore, the effect of the cantilever width can be neglected. 42 We can see from Eq. (2) that the vertical deflection is directly affected by the cantilever length (l).…”

Section: B Cantilever Geometrymentioning

confidence: 96%

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Kermany

Iacopi

2015

Journal of Applied Physics

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“…From previously published literatures, the intrinsic stress gradients were found to vary mostly between ?20 MPa/lm to -20 MPa/lm (Ballestra et al 2008;Chinthakindi et al 2002;Chu 1998;Dutta et al 2007). In this paper we analyzed in details the behavior of beam due to intrinsic residual stress in this range.…”

Section: Introductionmentioning

confidence: 94%

“…Moreover, the electroplating technique provides cost effectiveness and low processing temperature. There are primarily two electroplating solutions--cyanide and sulfite--have been used extensively for depositing electroplated gold layers (Ballestra et al 2008;Chinthakindi et al 2002;Chu 1998;Dutta et al 2007;Suryanarayana et al 2009). The gold layers deposited by both methods were found to possess residual intrinsic stress gradients.…”

Section: Introductionmentioning

confidence: 98%

Effect of residual stress on RF MEMS switch

et al. 2011

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Studies have been carried out on a RF MEMS shunt switch to analyze the effect of residual stress on its electromechanical characteristics. This paper presents the simulated results as well as theoretically calculated results of a shunt switch due to the presence of residual stress gradient in respect of resonant frequency, pull down voltage and switching characteristics. The effect of introduction of holes in the beam is also studied. The calculated results, corresponding to the switch (without holes) at zero residual stress, of resonant frequency, pull-down voltage and switch on and off time are 28.14 kHz, 28.2 V, 16.35 lsec and 8.6 lsec respectively. Modal analysis of the both the structures (with and without holes) are carried out for different values of residual stress gradients. Modal analysis predicted that higher values of tensile stress gradient are not favorable for switching action. The pull-down voltages and switch on and off times are simulated at different stress gradients. With the increase in compressive stress gradient, the pull-down voltage is found to increase, whereas, switch on and off times is decreased. Corresponding to -20 MPa/lm residual stress gradient, the resonant frequency, pull-down voltage and switch on and off times are found to be 74.5 kHz, 63.5 V, 7.5 lsec and 3.36 lsec respectively. Introduction holes in the structure modified these values to 63.77 kHz, 53.1 V, 8.7 lsec, 3.92 lsec respectively.

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“…In this case, the followed first step is to proceed with a static analysis of the MEMS gyroscope with a DC voltage applied to the TRANS126 elements attached to moving tuning-comb fingers, and then perform a pre-stressed modal analysis on the MEMS gyroscope structure. The included pre-stress captures the effects of the applied voltage on the system frequency characteristic [25,26]. The program outputs are mechanical displacements and eigen frequencies with incorporated electrostatic effects.…”

Section: Modal Analysismentioning

confidence: 99%

A Dual-Mass Resonant MEMS Gyroscope Design with Electrostatic Tuning for Frequency Mismatch Compensation

2021

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The micro-electro-mechanical systems (MEMS)-based sensor technologies are considered to be the enabling factor for the future development of smart sensing applications, mainly due to their small size, low power consumption and relatively low cost. This paper presents a new structurally and thermally stable design of a resonant mode-matched electrostatic z-axis MEMS gyroscope considering the foundry constraints of relatively low cost and commercially available silicon-on-insulator multi-user MEMS processes (SOIMUMPs) microfabrication process. The novelty of the proposed MEMS gyroscope design lies in the implementation of two separate masses for the drive and sense axis using a unique mechanical spring configuration that allows minimizing the cross-axis coupling between the drive and sense modes. For frequency mismatch compensation between the drive and sense modes due to foundry process uncertainties and gyroscope operating temperature variations, a comb-drive-based electrostatic tuning is implemented in the proposed design. The performance of the MEMS gyroscope design is verified through a detailed coupled-field electric-structural-thermal finite element method (FEM)-based analysis.

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Experimental-Numerical Comparison of the Cantilever MEMS Frequency Shift in presence of a Residual Stress Gradient

Cited by 21 publications

References 23 publications

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Controlling the intrinsic bending of hetero-epitaxial silicon carbide micro-cantilevers

Effect of residual stress on RF MEMS switch

A Dual-Mass Resonant MEMS Gyroscope Design with Electrostatic Tuning for Frequency Mismatch Compensation

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