Experimental study and modeling of microwave bond wire interconnects

Sutono, A.; Cafaro, N.G.; Laskar, J.; Tentzeris, E.M.

doi:10.1109/aps.2000.874889

Cited by 4 publications

(2 citation statements)

References 10 publications

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“…The CMOS substrate was simulated to estimate the parasitics of the PAD, substrate effect, and metal line loss. The equivalent circuit of the bondwire is extracted as a π-model [32]. The traces by EM and bondwires in π-model are then co-simulated by ADS circuit simulator to evaluate the overall inductance and Q.…”

Section: A Wafer-level Bslmentioning

confidence: 99%

2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor

Lin

Chiou

et al. 2013

IEEE Trans. Compon., Packag. Manufact. Technol.

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A complementary metal oxide semiconductor (CMOS) power amplifier (PA) using a wafer-level bondwire spiral inductor with high-quality factor (Q) is presented. The inductor is made by three top metal traces connected with bondwire loops above the CMOS chip. The proposed inductor with 2.75-nH inductance achieves a Q of 18, which is three times as much as that of a conventional CMOS standard spiral inductor at 2.4 GHz. The Q of the inductor is over 15 from 2 to 14 GHz, which can cover the frequency band of wireless sensor network and worldwide interoperability for microwave access applications. The output power and power-added efficiency of the PA with the inductor are improved by 1.5 dBm and 7% as compared with those of the fully integrated CMOS PA, respectively. Index Terms-Bondwire loop, complementary metal oxide semiconductor (CMOS), power added efficiency (PAE), power amplifier (PA), quality factor (Q), spiral inductor.

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Section: A Wafer-level Bslmentioning

confidence: 99%

2.4-GHz Complementary Metal Oxide Semiconductor Power Amplifier Using High-Quality Factor Wafer-Level Bondwire Spiral Inductor

Lin

Chiou

et al. 2013

IEEE Trans. Compon., Packag. Manufact. Technol.

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“…The length of the wire-bond is approximately 40 mil. The estimated loss of 40 mil ball crescent bond wires incorporated in the module at 14 GHz is 2 dB [11]. The filter ground planes were properly connected to the ground pads on the surface layers and are wire-bonded to the ground pads on the MMICs.…”

Section: Ltcc-based Module Design and Measuredmentioning

confidence: 99%