“…For PRET, the energy can be transferred from plasmonic metal species to semiconductors to generate excited electrons through nonradiative dipole-dipole coupling between the plasmonic dipole and electron-hole exciton in semiconductors. 20,21 Like NFE, no direct contact between the metal and semiconductor is required for PRET, but the energy transfer efficiency highly depends on the spectrum overlap between the plasmonic metal and semiconductor and the special distance between the two parts. 18,[20][21][22] Additionally, it has a reverse and competing process called Förster resonant energy transfer (FRET), where energy will transfer from the semiconductor to the plasmonic metal.…”