Extraction of source and drain resistances in MOSFETs using parasitic bipolar junction transistor

Layout optimization and modeling of an ESD-protection n-MOSFET in 0.13um silicide CMOS technology

“…Before bipolar turn-on take place, all the generation current acted as substrate current and M can be determined by: (15) After the bipolar turns on, M can no longer be extracted from measurements after snapback, since some of the generation current flows into the emitter. Here, M is given by miller formula: (16) K1,K2 are the parameters related to drain depletion width and impact ionization coefficients.…”

Avalanche Hot Source Method for Separated Extraction of Parasitic Source and Drain Resistances in Single Metal-Oxide-Semiconductor Field Effect Transistors

“…However, due to the difficulty on the separated extraction of R S and R D in MOSFETs without conductive DC gate current through the insulated gate, parasitic resistances are, generally, assumed to be R S =R D =R SD /2 regardless of the possible asymmetry in practical MOSFETs. Although several novel methods have been proposed to resolve those issues, those methods are highly complicated or require more than one device or additional patterns for a separated extraction of R S and R D [7][8][9][10][11][12][13][14][15].…”