Extreme-ultraviolet light source development to enable pre-production mask inspection

Partlow, M.; Besen, M.; Blackborow, Paul A.; Collins, R.; Gustafson, Deborah; Horne, Stephen F.; Smith, Douglas L.

doi:10.1117/1.jmm.11.2.021105

Cited by 9 publications

(2 citation statements)

References 20 publications

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“…The right cho seen in the fõ 100 mW tot sources can p On the other Although sig sources, there output [22]. Compact sources based on accelerator technologies have been developed in the early 1980's and 90's for X-ray lithography.…”

Section: The Sourmentioning

confidence: 99%

Scanning scattering contrast microscopy for actinic EUV mask inspection

et al. 2016

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Actinic mask inspection for EUV lithography with targeted specification of sensitivity and throughput is a big challenge and effective solutions are needed. We present a novel method for actinic mask inspection, i.e. scanning scattering contrast microscopy. In this method the EUV mask is scanned with a beam of relatively small spot size and the scattered light is recorded with a pixel detector. Since the mask layout is known, the scattering profile of a defect-free mask at the detector can be calculated. The signal between the measured and calculated signal provides the deviation between the real mask and its ideal counterpart and a signal above a certain threshold indicates the existence of a defect within the illumination area. Dynamic software filtering helps to suppress strong diffraction from defect free structures and allows registration of faint defects with high sensitivity. With the continuous scan of the whole mask area, a defect map can be obtained with high throughput. Therefore, we believe that this method has the potential of providing an effective solution for actinic mask inspection. Here we discuss the basic principles of the method, present proof-of-principle experiments, describe the basic components of a feasible stand-alone tool and present early results of the performance estimations of such a tool.

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Section: The Sourmentioning

confidence: 99%

Scanning scattering contrast microscopy for actinic EUV mask inspection

et al. 2016

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“…Conventional ways of generating EUV light are Z-pinch discharge plasma, LPP (laser produced plasma), and HHG (high harmonic generation). Z-pinch sources have high flux, high availability and need low maintenance, but come with a low brightness of about 10 W/mm 2 ⋅sr [10]. For higher brightness, LPP sources are needed and these can provide a brightness of about 100-300 W/mm 2 ⋅sr [11][12][13].…”

Section: Introductionmentioning

confidence: 99%

A high-brightness accelerator-based EUV source for metrology applications

Ekinci

Garvey

Streun

et al. 2018

Photomask Technology 2018

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One of the challenges of actinic metrology tools for EUV lithography is the availability of light sources with high brightness, stability, and availability. In particular, actinic patterned mask inspection on EUV reticles is considered an essential tool for the EUV lithography ecosystem and it requires an EUV source of high brightness. We present the design of a compact and accelerator-based light source producing EUV radiation with high-brightness for actinic metrology applications in the semiconductor industry. Our design is based on the well-established components and design principles. The specifications required for actinic mask inspection is achieved using a short period undulator and 430 MeV electron energy. The concentric design of storage and booster rings enables stable operation with a relatively small footprint. This study shows the commercial viability of a compact and high-brightness EUV source with high stability and reliability and demonstrates its feasibility for actinic metrology applications.

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