Fabrication and characterization of surface‐conduction electron emitters for SED application

Abstract

Abstract— A surface‐conduction electron emitter (SCE) for next‐generation flat‐panel displays has been developed. PdO thin films (approximately 10 nm thick) produced by an ink‐jet process were used to form the surface‐conduction electron emitter. The films were electroformed and activated while a voltage was applied, and an electron emitter with good characteristics was obtained. A current density of approximately 30 mA/cm2 was attained when an anode voltage of 10 kV was applied. Furthermore, a 36‐in. surface‐conduction electron‐emitter display (SED), consisting of SCEs and a phosphor screen similar to that of a CRT, was also developed.

Electron emission characteristics of Al–AlN granular films

“…However, the light emission could be observed when V f is about 5.3 V, which is defined as turn-on voltage. Yamamoto et al [9] reported that 100 nA emission current could be obtained with device voltage of 14.8 V for PdO emission cathode, and for pure island Au/Ag films the emission current can be measured with more than 10 V device voltage [3][4][5][6]. With the over-layer of BaO, Ba, or organic molecular the metal island films could emit electrons with about 5 V device voltage.…”

“…Effect of low work function over-layer, such as BaO, organic molecular, on the electron emission properties were also researched [4,6]. Japan authors [7][8][9] developed the PdO films for surface-conduction electron-emitter display (SED). Wang et al [10] developed porous aluminum oxide as cathode emitter and electron emission could be observed at short time.…”

Electroforming characteristics of SED emitter in Al-AlN granular films

“…Cathode panel is composed of base plate, electrodes and electron emitter, among which the electron emitter's material plays a key role in SED device. The pre-research of SED electron emitter's materials was concentrated on island metal films (IMF), discontinues semiconductor films and metal oxide films [1][2][3][4][5][6][7][8][9][10]. From the surface conduction emission (SCE) reported, we could summarize that it is necessary for obtaining SCE to form micrometer or submicrometer gap in the emitters.…”

“…For IMF and discontinue semiconductor films, the micrometer or sub-micrometer gap were formed by controlling film thickness and postannealing [1][2][3][4], and for double-layer electron emitter the bottom IMF and porous Al 2 O 3 were used to form micrometer or sub-micrometer gap [7,8]. The nano-gap could be formed by applying a varying voltage on the PdO films [9]. The nano-gap on a Pd strip was attributed to special geometry and high-pressure hydrogen absorption treatment [10].…”

Electroforming of continuous Al-AlN granular films

“…The effect of low performance on electron emission was also examined by Fedorovivh et al [6,8]. Recently, the Cannon Corporation has developed PdO films as surface-conduction electron-emitters [9][10][11]. Wang et al [12] and Zhu et al [13] investigated gold-carbon films on porous aluminum oxide and carbon on the top of island-like tin oxide layer as electron emitters, respectively.…”