Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core–multishell quantum well heterostructures

Yan, Xin; Zhang, Xia; Li, Junshuai; Wu, Yao; Cui, Jiangong; Ren, Xiaomin

doi:10.1039/c4nr05486e

Cited by 24 publications

(28 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For example, surface-passivated core-shell NW heterostructure can dramatically enhance the emission efficiency and electron mobility [ 5 – 7 ]. In comparison with homogeneous NWs, NW core-multishell quantum well (QW) heterostructures are more attractive in nanolasers due to the much stronger carrier confinement, decoupled cavity/gain-medium structure, as well as wavelength tenability [ 8 – 10 ]. However, due to the lattice mismatch between different materials, dislocations may generate in the NW heterostructures, which dramatically degrade the performance.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

et al. 2015

Self Cite

View full text Add to dashboard Cite

Critical dimensions for nanowire core-multishell heterostructures are analyzed by using finite-element method based on the energy equilibrium criteria. Results show that the nanowire core-shell heterostructure can sufficiently reduce the strain in the shell and increase the critical shell thickness. The critical dimensions for the nanowire core-multishell heterostructure are determined by the stress fields generated at two heterointerfaces. For thin barrier, the critical dimensions decrease as the core radius increases, while when the barrier is thick enough, the critical dimensions show an increase with the increase of core radius conversely. This can be attributed to a competition between the lattice mismatch and strain distribution, which dominate the critical dimensions alternatively. Two critical quantum well thicknesses are obtained in the nanowire core-multishell heterostructure. Below the dislocation-free critical thickness, the structure will be coherent regardless of the barrier thickness. While above the dislocation-unavoidable thickness, dislocations are always energetically favored. In the dislocation-controllable region between the two critical thicknesses, coherent structure can be obtained via controlling the well and barrier thicknesses. The results are in good agreement with the experimental data and may serve as guidance for the design of coherent nanowire core-multishell quantum well structures and devices.

show abstract

Section: Introductionmentioning

confidence: 99%

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

et al. 2015

Self Cite

View full text Add to dashboard Cite

show abstract

“…Indeed, InGaAs/GaAs QW nanowires have been successfully grown and show good potential in optoelectronic applications. 9, 30 However, no attempts have been made on GaAs1-xSbx QW nanowires. In addition, the lateral growth behavior of GaAs1-xSbx has yet to be explored compared with their axial counterparts.…”

mentioning

confidence: 99%

“…29 Thus, the growth of III-V QW nanowires has been extensively studied in the InGaAs/GaAs, GaAs/Al1-yGayAs, InGaAs/InP, InAs/InP, InAsP/InP, InGaN/GaN material systems. 24,27,[30][31][32][33] Unfortunately, growing high quality and uniform QW around the nanowire remains extremely challenging due to the anisotropic crystal growth and composition inhomogeneity. 34,35 As a consequence, lasing has only been demonstrated to date in InGaN/GaN and GaAs/Al1-yGayAs QW nanowires.…”

mentioning

confidence: 99%

Strong Amplified Spontaneous Emission from High Quality GaAs_1–xSb_x Single Quantum Well Nanowires

et al. 2017

View full text Add to dashboard Cite

Quantum confinement in semiconductor nanowires is of contemporary interest. Enhancing the quantum efficiency of quantum wells in nanowires and minimizing intrinsic absorption are necessary for reducing the threshold of nanowire lasers and are promising for wavelength tunable emitters and detectors. Here, we report on growth and optimization of GaAs1–x Sb x /Al1–y Ga y As quantum well heterostructures formed radially around pure zinc blende GaAs core nanowires. The emitted photon energy from GaAs0.89Sb0.11 quantum well (1.371 eV) is smaller than the GaAs core, thus showing advantages over GaAs/Al1–y Ga y As quantum well nanowires in photon emission. The high optical quality quantum well (internal quantum efficiency reaches as high as 90%) is carefully positioned so that the quantum well coincides with the maximum of the transverse electric (TE01) mode intensity profile. The obtained superior optical performance combined with the supported Fabry–Perot (F–P) cavity in the nanowire leads to the strong amplified spontaneous emission (ASE). Detailed studies of the amplified cavity mode are carried out by spatial–spectral photoluminescence (PL) imaging, where emission from nanowire is resolved both spatially and spectrally. Resonant emission is generated at nanowire ends and is polarized perpendicular to the nanowire, in agreement with the simulated polarization characteristics of the TE01 mode in the nanowire. The observation of strong ASE for single QW nanowire at room temperature shows the potential application of GaAs1–x Sb x QW nanowires as low threshold infrared nanowire lasers.

show abstract

“…The advantage of our approach is that several single NWs grown on the same substrate can be measured in the as-grown geometry. This makes it possible to study the structural parameters among different single NWs and correlate observed deviations with additional physical measurements such as photoluminescence or cathodoluminescence wavelengths and intensities taken from the same NWHS (Yan et al, 2015;Ahtapodov et al, 2012;Rigutti et al, 2011). As already shown by Biermanns et al (2009), individual GaAs NWs grown on the same substrate may exhibit different structural parameters.…”

Section: Introduction and Objectivesmentioning

confidence: 93%

Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction

et al. 2018

View full text Add to dashboard Cite

Typically, core-shell-shell semiconductor nanowires (NWs) made from III-V materials with low lattice mismatch grow pseudomorphically along the growth axis, i.e. the axial lattice parameters of the core and shell materials are the same. Therefore, both the structural composition and interface strain of the NWs are encoded along directions perpendicular to the growth axis. Owing to fluctuations in the supplied growth species during molecular beam epitaxy (MBE) growth, structural parameters such as local shell thickness, composition and strain may differ between NWs grown onto the same substrate. This requires structural analysis of single NWs instead of measuring NW ensembles. In this work, the complete structure of single GaAs/(In,Ga)As/GaAs coreshell-shell NW heterostructures is determined by means of X-ray nanodiffraction using synchrotron radiation. The NWs were grown by MBE on a prepatterned silicon (111) substrate with a core diameter of 50 nm and an (In,Ga)As shell thickness of 20 nm with a nominal indium concentration of 15%, capped by a 30 nm GaAs outer shell. In order to access single NWs with the X-ray nanobeam being incident parallel to the surface of the substrate, a single row of holes with a separation of 10 mm was defined by electron-beam lithography to act as nucleation centres for MBE NW growth. These well separated NWs were probed sequentially by X-ray nanodiffraction, recording three-dimensional reciprocal-space maps of Bragg reflections with scattering vectors parallel (out-of-plane) and perpendicular (in-plane) to the NW growth axis. From the out-of-plane 111 Bragg reflection, deviations from hexagonal symmetry were derived, together with the diameters of probed NWs grown under the same conditions. The radial NW composition and interface strain became accessible when measuring the two-dimensional scattering intensity distributions of the in-plane 220 and 224 reflections, exhibiting well pronounced thickness fringes perpendicular to the NW side planes (truncation rods, TRs). Quantitative values of thickness, composition and strain acting on the (In,Ga)As and GaAs shells were obtained via finite-element modelling of the core-shellshell NWs and subsequent Fourier transform, simulating the TRs measured along the three different directions of the hexagonally shaped NWs simultaneously. Considering the experimental constraints of the current experiment, thicknesses and In content have been evaluated with uncertainties of AE2 nm and AE0.01, respectively. Comparing data taken from different single NWs, the shell thicknesses differ from one to another.

show abstract

Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core–multishell quantum well heterostructures

Cited by 24 publications

References 21 publications

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

Strong Amplified Spontaneous Emission from High Quality GaAs_1–xSb_x Single Quantum Well Nanowires

Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction

Contact Info

Product

Resources

About

Fabrication and optical properties of GaAs/InGaAs/GaAs nanowire core–multishell quantum well heterostructures

Cited by 24 publications

References 21 publications

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

Analysis of Critical Dimensions for Nanowire Core-Multishell Heterostructures

Strong Amplified Spontaneous Emission from High Quality GaAs1–xSbx Single Quantum Well Nanowires

Complete structural and strain analysis of single GaAs/(In,Ga)As/GaAs core–shell–shell nanowires by means of in-plane and out-of-plane X-ray nanodiffraction

Contact Info

Product

Resources

About

Strong Amplified Spontaneous Emission from High Quality GaAs_1–xSb_x Single Quantum Well Nanowires