Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors

Cao, Dezhong; Yang, Xiaokun; Shen, Lüyang; Zhao, Chongchong; Luan, Caìna; Ma, Jin; Xiao, Hongdi

doi:10.1364/prj.6.001144

Cited by 20 publications

(26 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2a. It is reported that pits can be prepared via defect-related electrochemical etching 14,17 . Due to the interface curvature effects and the high electric field…”

Section: Resultsmentioning

confidence: 99%

“…An alternative method is electrochemical etching which has been applied widely to prepare the lift-off porous Si thin films 10 and self-supporting nanoporous GaN thin films 11,12 . More interestingly, the PL peak positions and intensity of porous Si and InGaN-based films can be modulated via electrochemical etching 13,14 , which makes the modulation of bandgap and PL intensity of InP possible. Additionally, distributed Bragg reflector (DBR) plays an important role in the development of optoelectronic devices 15,16 .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Cao

Wang

et al. 2020

Sci Rep

Self Cite

View full text Add to dashboard Cite

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

show abstract

“…2a. It is reported that pits can be prepared via defect-related electrochemical etching 14,17 . Due to the interface curvature effects and the high electric field…”

Section: Resultsmentioning

confidence: 99%

mentioning

confidence: 99%

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Cao

Wang

et al. 2020

Sci Rep

Self Cite

View full text Add to dashboard Cite

show abstract

“…One of the most promising approaches to achieving a lattice-matched DBR is to use multiple pairs of nanoporous (NP) GaN and GaN, where heavily silicon-doped GaN (i.e., n++ -GaN) can be converted into NP-GaN by means of using electrochemical (EC) etching [ 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ]. The mechanism for the EC etching is due to an initial oxidation process of GaN and a subsequent dissolution process in an acidic solution under bias.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore, EC etching can be conducted only on highly conductive GaN (i.e., n++ -GaN), while undoped GaN remains intact. Due to the formed porosities, the refractive index of NP-GaN is significantly lower than that of GaN [ 16 , 19 , 20 , 21 , 22 , 23 ]. For example, for a porosity of 0.5, the contrast in refractive index can be up to 0.6, which is even larger than that for AlAs/GaAs [ 23 , 24 ].…”

Section: Introductionmentioning

confidence: 99%

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

et al. 2022

View full text Add to dashboard Cite

Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-doped n++-Al0.01Ga0.99N and undoped GaN instead of widely used multiple pairs of heavily silicon-doped n++-GaN and undoped GaN for the fabrication of a lattice-matched distributed Bragg reflector (DBR) by using an electrochemical (EC) etching technique, where the lattice mismatch between Al0.01Ga0.99N and GaN can be safely ignored. By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Our work demonstrates that the NP-Al0.01Ga0.99N/undoped GaN-based DBR exhibits a much smoother surface, enhanced reflectivity and a wider stopband than the NP-GaN/undoped GaN-based DBR. Furthermore, the NP-Al0.01Ga0.99N/undoped GaN-based DBR sample with a large size (up to 1 mm in width) can be obtained, while a standard NP-GaN/undoped GaN-based DBR sample obtained is typically on a scale of a few 100 μm in width. Finally, a series of DBR structures with high performance, ranging from blue to dark yellow, was demonstrated by using multiple pairs of n++-Al0.01Ga0.99N and undoped GaN.

show abstract

“…However, many groups have studied the DBR on LED structure focusing on the improvement of the output light intensity for a specific light wavelength. [17]- [22] In this study, the SiO 2 film or DBR structure was employed as the back-reflector and the passivation layer at the same time. Furthermore, the multi-functional DBR structure combined with the tapered sidewall structure in the µ-LED array, which can further improve light extraction efficiency.…”

Section: Introductionmentioning

confidence: 99%

Improved Performance of Passive-Matrix Micro-LED Displays Using a Multi-Function Passivation Structure

Chen

Hsiao

Shen³

et al. 2020

IEEE Photonics J.

View full text Add to dashboard Cite

The enhanced light output efficiency of passive-matrix micro light-emitting-diode (LED) display was achieved by employing the tapered sidewalls and distributed-Braggreflector (DBR) passivation structure. The oblique angles at the bottom of multi-quantum wall and n-GaN are 48.9°and 21.8°, which can favor the planarization structure of pixel interconnection. As increasing the number of DBR (SiO 2 /TiO 2 ) stacking from 3.5 to 5.5 pairs, the reflectance increased obviously from 81.4% to 98.0% at the wavelength of 450 nm. As the micro-LED display with a multi-function DBR structure, the output power of 1.07 mW under 1 mA, the external-quantum efficiency of 42% under 0.2 mA, and the luminance of 435 nits were obtained.

show abstract

Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors

Cited by 20 publications

References 25 publications

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Improved Performance of Passive-Matrix Micro-LED Displays Using a Multi-Function Passivation Structure

Contact Info

Product

Resources

About