Preparation and novel photoluminescence properties of the self-supporting nanoporous InP thin films

Abstract

Self-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.

Development and Prospects of Halide Perovskite Single Crystal Films

“…[5,6] Furthermore, gallium arsenide (GaAs), indium phosphide, and other single-crystal semiconductor films are model materials in modern microelectronic industries. [7,8] Beyond these canonical systems, there is high demand to expand these methods to preparing single crystal thin films of emerging semiconductors such as halide perovskite ABX 3 materials (e.g., MAPbX 3 , FAPbX 3 and CsPbX 3 , where MA + is CH 3 NH 3 emitting properties [30,31] and is more stable than MAPbX 3 , [32] leading to applications in photodetectors and LED devices. [33,34] For example, Li et al demonstrated that controlling surface ligand density on CsPbBr 3 perovskite quantum dots can lead to a 50-fold improvement external quantum efficiency in lightemitting diodes incorporating the nanoparticles.…”

“…[ 5,6 ] Furthermore, gallium arsenide (GaAs), indium phosphide, and other single‐crystal semiconductor films are model materials in modern microelectronic industries. [ 7,8 ]…”