Fabrication of freestanding m-plane GaN wafer by using the HVPE technique on an aluminum carbide buffer layer on an m-plane sapphire substrate

Effect of basal‐plane stacking faults on the Bragg peak broadening in m‐plane GaN

“…2/c ≈ 4x10 7 /cm. Three samples measured in this study have BSF densities on the order of ~1 x10 6 /cm, similar to values reported by TEM in typical non-polar GaN [1,2].…”

“…Extended defects observed by TEM in non-polar materials are dominated by basal-plane stacking faults (BSFs), in addition to extensive networks of threading dislocations (TDs) [1,2]. An early method to quantify the density of BSFs was described by Warren based on Bragg peak (θ/2θ-scan) broadening or peak shift [3].…”

Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching

“…Accordingly, research efforts in developing nonpolar m-plane GaN have dramatically increased recently. So far, many kinds of substrates have been used to grow m-plane GaN, such as g-LiAlO 2 (1 0 0) [2,3], m-plane SiC [4,5], m-plane sapphire [6][7][8][9] and patterned a-plane sapphire by epitaxial lateral overgrowth from a sapphire sidewall (ELOSS) [10]. However, m-plane GaN still suffers from reduced crystalline quality as compared to conventional c-plane material, showing higher density of structural defects, mainly basal-plane stacking faults (BSFs) and threading dislocations (TDs).…”

Effects of the inclination direction of vicinal m-plane sapphire substrates on the crystal quality of m-plane GaN film

“…However, nonpolar devices suffer considerably from problems such as poor electrical and optical properties mainly due to the difficulty of growing a high-quality, non-polar GaN film [4]. Many reports have documented the hetero-epitaxial growth of m-GaN films on m-GaN [5], m-plane SiC [6], (1 0 0) LiAlO 2 [7], m-plane ZnO [8], and m-plane sapphire (m-sapphire) substrates [9,10]. Although an m-GaN substrate provided the best results, the m-sapphire is still an attractive substrate for the growth of m-GaN films, because it is cost-effective, chemically and thermally stable, and is available on a large scale compared with other substrates.…”