Fabrication of high-aspect-ratio silicon nanopillar arrays with the conventional reactive ion etching technique

Chang, Yuan‐Shiun; Chou, Q.-R.; Lin, J. Y.; Lee, C.-H.

doi:10.1007/s00339-006-3748-0

Cited by 40 publications

(27 citation statements)

References 16 publications

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“…In line with the recipe of Ref. 21, we immersed our samples in a solution of HNO 3 ∶HCl∶H 2 O ¼ 1∶3∶6 (volume fractions) for approximately 12 h. However, the result showed a negligible etch rate and did not provide any significant changes. We speculate that the DRIE etching at −120°C with O 2 for passivation had provided extra-smooth side interfaces with low densities of chemically active sites, which could have resulted in the negligible effect of dilute aqua regia on the nanopillars.…”

Section: Removal Of Resist Residuesmentioning

confidence: 96%

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Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Antonov

Zuiddam

Frenken

2015

J. Micro/Nanolith. MEMS MOEMS

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Abstract. This article reports the results of the fabrication of large arrays of nanopillars for future tribological experiments. This fabrication focused on achieving a constant high aspect ratio up to 1∶24 and a separation between each pair of adjacent pillars. Electron beam lithography was used to write patterns in hydrogen silsesquioxane (HSQ) negative tone resist. To achieve nanopillars of high aspect ratios and with smooth sides, deep reactive ion etching was employed with SF 6 and O 2 at cryogenic temperatures. Finally, the residual HSQ was removed using CHF 3 ∕O 2 plasma etching in order to obtain a smooth finish. © The Authors. Published by SPIE under a Creative Commons Attribution 3.0 Unported License. Distribution or reproduction of this work in whole or in part requires full attribution of the original publication, including its DOI.

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Section: Removal Of Resist Residuesmentioning

confidence: 96%

“…It was reported in Ref. 21 that it is possible to slowly and uniformly shrink the diameter of pillars by etching them in dilute aqua Fig. 1 Schematic of the step-by-step fabrication process of the nanopillar arrays.…”

Section: Removal Of Resist Residuesmentioning

confidence: 99%

Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Antonov

Zuiddam

Frenken

2015

J. Micro/Nanolith. MEMS MOEMS

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“…Some methods and systems, for example, nanoimprinting lithography [1,2], electron beam lithography [3][4][5], etching (reactive ion etching and dry etching) [6][7][8][9][10], femtosecond laser [11], interference lithography [12], and focused ion beam (FIB) [13][14][15][16], have been reported to develop optical structures or devices (e.g., specific functional plasmonic nanostructures). Compared with these reported methods and systems, despite the potential drawbacks of surface damage caused by high-energy ion beam irradiation and relatively limited processing speed for large-area high-density structural patterns [6,13], the FIB has its strength in onestep maskless simpler, more flexible, and better-controlled nanoprecision machining, patterning, and fabrication especially for submicron, nanoscale, or subwavelength various functional samples or structures via ion beam induced milling, etching, and deposition due to its advantages of large depth of focus, high resolution, patterning flexibility, and direct-writing capability [6,[13][14][15][16][17]].…”

Section: Introductionmentioning

confidence: 99%

Focused Ion Beam Assisted Interface Detection for Fabricating Functional Plasmonic Nanostructures

Wang

Zhou

2015

Journal of Nanomaterials

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Plasmonic nanoscale devices/structures have gained more attention from researchers due to their promising functions and/or applications. One important technical focus on this rapidly growing optical device technology is how to precisely control and fabricate nanostructures for different functions or applications (i.e., patterning end points should locate at/near the interface while fabricating these plasmonic nanostructures), which needs a systematic methodology for nanoscale machining, patterning, and fabrication when using the versatile nanoprecision tool focused ion beam (FIB), that is, the FIB-assisted interface detection for fabricating functional plasmonic nanostructures. Accordingly, in this work, the FIB-assisted interface detection was proposed and then successfully carried out using the sample-absorbed current as the detection signal, and the real-time patterning depth control for plasmonic structure fabrication was achieved via controlling machining time. Besides, quantitative models for the sample-absorbed currents and the ion beam current were also established. In addition, some nanostructures for localized surface plasmon resonance biosensing applications were developed based on the proposed interface detection methodology for FIB nanofabrication of functional plasmonic nanostructures. It was shown that the achieved methodology can be conveniently used for real-time control and precise fabrication of different functional plasmonic nanostructures with different geometries and dimensions.

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“…For instance plasmas based on different gas mixtures as SF 6 /O 2 [5], CF 4 [6], and SF 6 /N 2 [7] have been investigated, and, other techniques such as plasma immersion ion implantation [8], laser texturing [9], vertical silicon nanopillar arrays [10], nanowires [11], and nanocones [12]. However, the structures obtained by those techniques are needle-like, tip-like, wire-like, and sponge-like, which are not suitable for reliable c-Si surface passivation in solar cells.…”

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confidence: 99%

Effect of substrate temperature on the plasma texturing process of c‐Si wafers for black silicon solar cells

Murias

Moreno

Reyes-Betanzo

et al. 2016

Physica Status Solidi (a)

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We report on a study of the effect of the substrate temperature on the formation of black silicon on c-Si wafers and consequently on the reduction of the wafer surface diffuse reflectance. We observed that lower substrate temperatures enhance the texturing processes producing completely black silicon surfaces. The optimized substrate temperature (2.5 8C) used during the plasma process has resulted in the formation of well-defined pyramidlike structures as is done by wet processes. Moreover, the textured c-Si wafers have very low diffuse reflectance values, as low as 3%, which are much lower than those values obtained using wet texturing processes based on KOH and NaOH solutions (which are in the range of 12-14%).

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Fabrication of high-aspect-ratio silicon nanopillar arrays with the conventional reactive ion etching technique

Cited by 40 publications

References 16 publications

Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Fabrication of high-aspect ratio silicon nanopillars for tribological experiments

Focused Ion Beam Assisted Interface Detection for Fabricating Functional Plasmonic Nanostructures

Effect of substrate temperature on the plasma texturing process of c‐Si wafers for black silicon solar cells

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