Fabrication of high power RF MEMS switches

Cui, Zheng; McErlean, E.P.; Greed, R.B.; Voyce, D.C.

doi:10.1016/j.mee.2006.01.067

Cited by 20 publications

(8 citation statements)

References 2 publications

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“…In Fig. 17, we show the separatrix for V DC = 3 V by integrating system (36) in forward and backward time using LTI, for the undamped and unforced case (c = 0 and V AC = 0), starting from the unstable static solutions corresponding to displacements w s1 (1) and w s2 (1). The dashed curves represent the separatrices corresponding to both microbeams.…”

Section: Unforced and Undamped Casementioning

confidence: 99%

“…Traditional microelectronic switches, such as silicon FETs (field effect transistors) and PIN (positive-intrinsic-negative) diode switches present inadequate switching characteristics when the signal frequency is greater than 1 GHz [1]. These switches present high insertion loss and poor isolation during the ON and OFF switching, whereas switches fabricated by MEMS technology can overcome these limitations [2,3].…”

Section: Introductionmentioning

confidence: 99%

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A double microbeam MEMS ohmic switch for RF-applications with low actuation voltage

Samaali¹,

Najar

Choura³

et al. 2010

Nonlinear Dyn

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In this paper, we propose the design of an ohmic contact RF microswitch with low voltage actuation, where the upper and lower microplates are displaceable. We develop a mathematical model for the RF microswitch made up of two electrostatically actuated microplates; each microplate is attached to the end of a microcantilever. We assume that the microbeams are flexible and that the microplates are rigid. The electrostatic force applied between the two microplates is a nonlinear function of the displacements and applied voltage. We formulate and solve the static and eigenvalue problems associated with the proposed microsystem. We also examine the dynamic behavior of the microswitch by calculating the limitcycle solutions. We discretize the equations of motion by considering the first few dominant modes in the microsystem dynamics. We show that only two modes are sufficient to accurately simulate the response of the H. Samaali ( ) · S. Choura · M. Masmoudi

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Section: Unforced and Undamped Casementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A double microbeam MEMS ohmic switch for RF-applications with low actuation voltage

Samaali¹,

Najar

Choura³

et al. 2010

Nonlinear Dyn

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“…4,5 More recently, the application of silicon nitride films has been extended to structural materials in microelectromechanical system (MEMS) devices. [6][7][8][9] Silicon nitride films can be prepared by a variety of methods such as low-pressure chemical vapor deposition (LPCVD), 10,11 plasma-enhanced CVD (PECVD), 12,13 pulsed laser ablation, 14 reactive evaporation, 15 and sputtering. 16,17 Conventionally, high-quality stoichiometric silicon nitride films are obtained by the LPCVD process at temperatures in excess of 700°C.…”

Section: Introductionmentioning

confidence: 99%

“…[16][17][18][19][20] Silicon nitride deposited by LPCVD and PECVD is widely used as a structural material in the fabrication of different MEMS devices, such as static membranes, tunable inductors, and tunable MEMS Fabry-Pérot optical filters. [6][7][8][9]21,22 However, sputtered silicon nitride has not yet been explored as a structural layer in MEMS. This is the main motivation for the present work.…”

Section: Introductionmentioning

confidence: 99%

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Bhatt

Chandra

2009

Journal of Elec Materi

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In the present work, we report silicon nitride films deposited by a radiofrequency (RF) sputtering process at relatively low temperatures (<260°C) for microelectromechanical system (MEMS) applications. The films were prepared by RF diode sputtering using a 3-inch-diameter Si 3 N 4 target in an argon ambient at 5 mTorr to 20 mTorr pressure and an RF power of 100 W to 300 W. The influence of the film deposition parameters, such as RF power and sputtering pressure, on deposition rate, Si-N bonding, surface roughness, etch rate, and stress in the films was investigated. The films were deposited on single/double-side polished silicon wafers and transparent fused-quartz substrates. To explore the RF-sputtered silicon nitride film as a structural material in MEMS, microcantilever beams of silicon nitride were fabricated by bulk, surface, and surface-bulk micromachining technology. An RF-sputtered phosphosilicate glass film was used as a sacrificial layer with RF-sputtered silicon nitride. Other applications of sputtered silicon nitride films, such as in the local oxidation of silicon (LOCOS) process, were also investigated.

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“…Radio frequency (RF) micro and nano electromechanical switches (MEMS/NEMS) are an excellent options for the replacement of conventional semiconductor switches as they offer low power consumption, low noise operation, high electrical isolation, and ultra wide frequency band [1]. Electrostatic MEMS/NEMS switches can be categorized based on their structure (shunt or capacitive) or material (metallic and carbon).…”

Section: Introductionmentioning

confidence: 99%

Characterization and optimization to improve uneven surface on MEMS bridge fabrication

et al. 2015

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Fabrication of high power RF MEMS switches

Cited by 20 publications

References 2 publications

A double microbeam MEMS ohmic switch for RF-applications with low actuation voltage

A double microbeam MEMS ohmic switch for RF-applications with low actuation voltage

Silicon Nitride Films Deposited by RF Sputtering for Microstructure Fabrication in MEMS

Characterization and optimization to improve uneven surface on MEMS bridge fabrication

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