Advanced Applications in Manufacturing Enginering 2019
DOI: 10.1016/b978-0-08-102414-0.00002-1
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Fabrication of Magnetic Tunnel Junctions

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Cited by 7 publications
(7 citation statements)
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“…One of the most common microfabrication methods used for lab-on-a-chip is photolithography. Explaining the process involved with photolithography, as shown in Figure 2 : photolithography uses UV light to transfer the predesigned pattern from a photomask to a substrate or thin film [ 42 ]. First, the substrate will need to be cleaned and subsequently coated with a photosensitive chemical called photoresist.…”
Section: Lab-on-a-chip Microfabrication Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…One of the most common microfabrication methods used for lab-on-a-chip is photolithography. Explaining the process involved with photolithography, as shown in Figure 2 : photolithography uses UV light to transfer the predesigned pattern from a photomask to a substrate or thin film [ 42 ]. First, the substrate will need to be cleaned and subsequently coated with a photosensitive chemical called photoresist.…”
Section: Lab-on-a-chip Microfabrication Methodsmentioning
confidence: 99%
“…Depending on the photoresist, a positive or negative pattern is formed when the photoresist is developed. This is because there are two types of photoresists: positive and negative, which react differently when exposed to the UV light and whose use will depend on the intended structure that is to be fabricated [ 42 , 43 ]. Positive photoresist becomes more soluble and is removed after exposure to UV light, while negative photoresist polymerizes, hardens, and remains after exposure to UV light.…”
Section: Lab-on-a-chip Microfabrication Methodsmentioning
confidence: 99%
“…For making uniform porous GDL, pores morphology on the mask should be accurately distributed. The exposure of the material to light and the process (dry or wet) are the two most important phases in this technology; these two processes control the whole design of the porous material [ 71 , 72 ].…”
Section: Fabrication Technologiesmentioning
confidence: 99%
“…[8][9][10][11] Research in recent years shows that spintronic devices such as the magnetic tunnel junction (MTJ) are among the considered memory devices for designing the new generation of non-volatile memories due to high retention time, long-endurance, low static power consumption, and most importantly, compatibility with CMOS and CNTFET fabrication process. [12][13][14][15][16][17][18][19] Utilizing the non-volatile feature of the MTJ device and tunable threshold voltage of the gate-all-around-CNTFET (GAA-CNTFET) through flat-band voltage, this paper proposes a low-cost and highly reliable spintronic non-volatile quaternary memory. The proposed design offers low average and static power consumption and a low area overhead over state-of-the-art counterparts.…”
mentioning
confidence: 99%