Fabrication of PbS QD/Silicon Hybrid Infrared Photodiode for LSI Platform

Higo, Akio; Mita, Yoshio; Wang, Haibin; Kubo, Takaya; Segawa, Hiroshi; Usami, Naoto; Okamoto, Yuki; Yamada, Kazuo; Takeshiro, Yudai; Sugiyama, Masakazu

doi:10.1541/ieejsmas.138.307

Cited by 5 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It can be seen from previous literature reports that in the vertical structure devices (Si–ZnO–PbS–Au), the devices irradiated from the Si side (back) only show weak light responsivity in the NIR region, and there is no obvious light response in the UV–Vis band. However, when the device is irradiated from the Au side (front), the device can show broadband spectral response. − This result shows that when light irradiates the silicon substrate from the back, it will first reflect some photons, and then absorb and filter out the photons in the Vis region, thus reducing the absorption and utilization of photons by the device, as shown in Figure d. Therefore, the preparation of device structures that can be directly irradiated on materials is very innovative and positive.…”

Section: Resultsmentioning

confidence: 99%

“…We fabricated ZnO NWs/PbS QDs optoelectronic devices with an interdigitated electrode structure to maximize the utilization of photon energy. And the semiconductor material will not be covered by the interdigitated electrodes, so there is no need to worry about the damage to the semiconductor film caused by the deposition of the electrode, and the beam can be directly irradiated on the semiconductor material, avoiding the substrate reflection and absorption loss caused by back lighting. − …”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

High-Photoelectric-Conversion ZnO NWs/PbS QDs Broadband Photodetector with an Innovative Interdigitated Electrode Structure

Zhao,

Jiang

2023

Crystal Growth & Design

View full text Add to dashboard Cite

Since the broadband photodetector can realize multiband detection and has strong application ability, it has a wide range of applications in the fields of information storage and broadband optical communication. The formation of heterostructures by selecting semiconductors with high electron mobility and narrow-band-gap quantum dots (QDs) is a controllable and excellent method to realize broadband detection of detectors from ultraviolet (UV) to near-infrared (NIR). This experimental study broadens the detection range of optoelectronic devices by introducing easily synthesized and band-gap-controlled PbS QDs to form a heterostructure with a ZnO film. By introducing ZnO nanowires (NWs) to form a three-dimensional (3D) bulk heterojunction structure, the interpenetration of ZnO NWs in the PbS QDs layer reduces the distance that minority carriers must diffuse before being injected into the depletion region, thereby improving the carrier collection efficiency. Further, the problem of limited thickness of the light-absorbing layer caused by insufficient electron collection length is effectively solved. The ZnO NWs/PbS QDs photoelectric device in this study guarantees the detection ability of the ultraviolet band while realizing wide band detection. The responsivity of the ultraviolet wave band is greatly improved, 52 times higher than that of the ordinary ZnO photoelectric device, the photocurrent can be increased by 40 times, and the external quantum efficiency (EQE) of the device can reach 255%. This research innovatively uses the interdigitated electrode structure to fabricate ZnO NWs/PbS QDs optoelectronic devices, which have better light utilization and stability. This research will have great reference significance for the development of controllable broadband photodetector applications.

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High-Photoelectric-Conversion ZnO NWs/PbS QDs Broadband Photodetector with an Innovative Interdigitated Electrode Structure

Zhao,

Jiang

2023

Crystal Growth & Design

View full text Add to dashboard Cite

show abstract

“…We fabricated a PbS CQDs/Si heterojunction for an IRsensitive photodiode; however, the quantum efficiency exhibited by this junction was quite low [16], [17]. To improve the performance, a thin ZnO layer as a carrier collection layer was inserted between PbS/Si interface [13], [18], [19].…”

Section: Introductionmentioning

confidence: 99%

Improvement of ZnO/Si Heterojunctions With a Coaxial Circular Transmission Line Model Applicable to Both Ohmic and Schottky

Miyazawa

Usami

Wang

et al. 2021

IEEE Trans. Semicond. Manufact.

Self Cite

View full text Add to dashboard Cite

Investigating heterointerfaces with test structures is crucial for fabricating electronic and photonic devices. Recently, we proposed and developed a PbS colloidal quantum dot/ZnO/Si hybrid infrared detector for infrared-sensitive optoelectronic devices on silicon-based large-scale integrated circuits. The conventional circular transfer length method (CTLM) is commonly used for evaluating Ohmic contact. To apply the CTLM to a heterointerface junction, we propose a coaxial CTLM (CCTLM) that includes a circular electrode in the middle and doughnutshaped outer contact electrodes. The proposed test structure can be identified and quantitatively analyzed for the junction type (Ohmic or Schottky) by changing the electrode area. By using the CCTLM test structure for n-type ZnO/n-type Si heterojunctions and X-ray photoemission spectroscopy measurements, we identified the heterojunction as the Schottky type via the CCTLM and estimated the band diagram of the heterojunction.

show abstract

PbS Quantum Dot / ZnO Nanowires Hybrid Test Structures for Infrared Photodetector

Wang

Higo

Mita

et al. 2019

2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)

View full text Add to dashboard Cite

Fabrication of PbS QD/Silicon Hybrid Infrared Photodiode for LSI Platform

Cited by 5 publications

References 8 publications

High-Photoelectric-Conversion ZnO NWs/PbS QDs Broadband Photodetector with an Innovative Interdigitated Electrode Structure

High-Photoelectric-Conversion ZnO NWs/PbS QDs Broadband Photodetector with an Innovative Interdigitated Electrode Structure

Improvement of ZnO/Si Heterojunctions With a Coaxial Circular Transmission Line Model Applicable to Both Ohmic and Schottky

PbS Quantum Dot / ZnO Nanowires Hybrid Test Structures for Infrared Photodetector

Contact Info

Product

Resources

About