Fabrication of polycrystalline silicon nanowires using conventional UV lithography

Demami, Fouad; Pichon, Laurent; Rogel, Régis; Salaün, Anne‐Claire

doi:10.1088/1757-899x/6/1/012014

Cited by 23 publications

(20 citation statements)

References 8 publications

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“…Accurate control of the polysilicon layer Reactive Ion Etching (RIE) rate leads to the formation of nanometric size sidewall spacers that can be used as nanowires. The feasibility of this technological step was previously demonstrated [11].…”

Section: Methodsmentioning

confidence: 93%

Electrical properties of polysilicon nanowires for device applications

Demami

Rogel

Salaün

et al. 2010

Phys. Status Solidi (c)

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All‐organic photopatterned 4×4 one‐diode–one‐resistor (1D–1R) cell arrays are presented by Tae‐Wook Kim, Alex Jen, and co‐workers . The all‐organic type photopatterned 4×4 1D–1R cell array architecture not only improves reading accessibility, but also prevents cross‐talk with neighboring cells. Each 1D–1R cell in the array architecture shows excellent switching performance, which suggests that such memory devices can be used for future advanced nonvolatile memory applications.

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Section: Methodsmentioning

confidence: 93%

Electrical properties of polysilicon nanowires for device applications

Demami

Rogel

Salaün

et al. 2010

Phys. Status Solidi (c)

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“…The maximum writing field for AURIGIA Compact FIB machine is 197μm 2 ; beyond that area stitching is required, which has a tolerance of ±0.5μm. Also, the minimum spot size that we may get is 30nm with a minimum current of 1pA.…”

Section: Resultsmentioning

confidence: 99%

“…High resolution, which is required for more compact nano-devices, can be somewhat obtained with the expense of depth of focus, hence the device designs involve a tradeoff between short wavelength and large numerical apertures [1][2][3].The limitation of resolution due to diffraction results in searching alternative lithography techniques, which are being developed in research laboratories throughout the world. Moreover, dependency on masks complicates the fabrication as a new mask must be generated for each new design.…”

Section: Introductionmentioning

confidence: 99%

Focused Ion Beam Fabrication of SU-8 Waveguide Structures on Oxidized Silicon

2017

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This work deals with SU-8 waveguides and waveguide structures fabricated on an oxidized silicon substrate using 'Focused ion beam (FIB) lithography'. From our experimentation it seems that FIB method is practically not suitable for fabricating long SU-8 waveguide structures, rather it is more suitable for nanoscale modification of already fabricated waveguides, such as, to fabricate photonic crystal structures.

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“…The feasibility of these polyscrystalline silicon NWs with curvature radius as low as 50 nm was previously demonstrated [16]. This method allows the fabrication of parallel SiNWs network…”

Section: Then a Polycrystalline Silicon Layer Is Deposited By Low Prmentioning

confidence: 97%

Polysilicon Nanowires for chemical sensing applications

Jacques

Salaün

et al. 2012

MRS Proc.

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Polycrystalline silicon nanowires are synthesized using a classical fabrication method commonly used in microelectronic industry: the sidewall spacer formation technique. Assets of this technological process rest on low cost lithographic tools use, classical silicon planar technology compatibility and the possibility to get by direct patterning numerous parallel nanowires with precise location on the substrate. Grounded and suspended polycrystalline silicon nanowires with a curvature radius as low as 150nm are integrated into resistors and used as gas (ammonia) sensors. Results show potential use of these nanowires for charged chemical species detection with an increase of the sensitivity with the increase of SiNWs exchange surface with the environment.

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Fabrication of polycrystalline silicon nanowires using conventional UV lithography

Cited by 23 publications

References 8 publications

Electrical properties of polysilicon nanowires for device applications

Electrical properties of polysilicon nanowires for device applications

Focused Ion Beam Fabrication of SU-8 Waveguide Structures on Oxidized Silicon

Polysilicon Nanowires for chemical sensing applications

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