Fabrication of ultrafast Si based MSM photodetector

Loken, Michael R.; Kappius, L.; Manti, S.; Buchal, Ch.

doi:10.1049/el:19980661

Cited by 12 publications

(3 citation statements)

References 4 publications

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“…Un-reacted metal on top of the oxide was removed by selective etching in an Aqua Regia solution. Previous studies showed that the resistivities of PtSi of comparable thicknesses and formed with similar thermal treatments were on the order of 30 cm [9,10]. Detectors of a range of geometries were investigated.…”

Section: Methodsmentioning

confidence: 99%

“…The mirrors were made of dielectric/silicon or Si/SiGe multi-layers through deposition [6,7]. Buried suicide layers, embedded by wafer bonding or implant, have also been used as mirror material for vertical cavities [8,9]. The absorbing layer was formed by epitaxial growth on the bottom mirrors, and it was often difficult to obtain high quality materials.…”

Section: Introductionmentioning

confidence: 99%

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Novel waveguide MSM photodetectors on SOI substrates using silicides

Janz

Cheben

et al. 2001

SPIE Proceedings

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Novel Si waveguide MSM photodetector suitable for high speed/high quantum efficiency applications is proposed and demonstrated. Silicides are formed on a silicon-on-insulator (SOl) substrate through metal/Si reaction under heat treatment, in two areas separated by a narrow gap. The silicide sidewalls on the two sides of the narrow gap provide lateral waveguide confinement, and also serve as electrodes. The silicide/Si interface forms a Schottky junction, making the structure a MSM diode. The waveguide structure provides a long optical path length to increase the quantum efficiency at near infrared wavelengths. The distance between electrodes can be changed easily through photolithography, and can be made very small to reduce the transit time between electrodes for high-speed operation. Since the devices are made on SOl substrates, the drift component of the photocurrent can be eliminated, further facilitating high-speed operation. First set of photodetectors was made using PtSi on commercially available 501 substrates with 0.34Si layer. Initial experiments have demonstrated a responsivity of near 200mAIW at 2=98O nm for a detector with 486 tm long electrodes and 2 jtm gap size. The dark current was on the order of 0. 1 nA/Rm2 at 5V bias.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Novel waveguide MSM photodetectors on SOI substrates using silicides

Janz

Cheben

et al. 2001

SPIE Proceedings

View full text Add to dashboard Cite

show abstract

“…These designs suffer from a similar tradeoff between speed and efficiency (i.e. pulsewidth = 6.7 ps and efficiency = 4.6 % in [2]). A bandwidth of 82 GHz and efficiency of 19 % was achieved on a vertical MSM device with backside texturing, however, this would be extremely difficult to incorporate into a standard CMOS process [3].…”

Section: Previous Workmentioning

confidence: 99%

High-speed lateral PIN photodiodes in silicon technologies

et al. 2004

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High speed, efficient photodetectors are difficult to fabricate in standard silicon fabrication processes due to the long absorption length of silicon. However, high performance servers will soon require dense optical interconnects with low cost and high reliability, and this trend favors monolithic silicon receivers over hybrid counterparts. Recently, lateral PIN photodiode structures have been demonstrated in silicon CMOS technology with little or no process modifications. Optical receivers based on these detectors have achieved record performance in terms of speed and sensitivity. This paper will discuss the advantages, issues and recent advances in silicon-based photodetectors and optical receivers. This includes the fastest photodetector ever implemented in a standard bulk CMOS process, a 13.9 Gb/s lateral trench detector implemented in a modified EDRAM process, and a >15 GHz pure germanium photodiode grown directly on a silicon substrate.

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Color‐Selective and CMOS‐Compatible Photodetection Based on Aluminum Plasmonics

et al. 2014

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A color-selective, band-engineered photodetector is demonstrated. The device uses two Schottky junctions to accumulate charge in an energy well, which results in photocurrent gain and a plasmonic aluminum grating for photocurrent enhancement and red-green-blue color selectivity. This work provides a more intelligent way to design imaging sensors by integrating amplifiers and color filters directly into pixels.

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Fabrication of ultrafast Si based MSM photodetector

Cited by 12 publications

References 4 publications

Novel waveguide MSM photodetectors on SOI substrates using silicides

Novel waveguide MSM photodetectors on SOI substrates using silicides

High-speed lateral PIN photodiodes in silicon technologies

Color‐Selective and CMOS‐Compatible Photodetection Based on Aluminum Plasmonics

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