Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing

Abstract

The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/ erase speed of 1 ls under low operating voltages of 6 7 V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/ diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM. V

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication

“…Si nanocrystals (Si NCs) have been extensively studied in the past few years due to their potential applications in advanced nanoelectronic and optoelectronic devices, such as non-volatile memories 1 , light emitting devices 2 3 4 5 and the next generation of solar cells 6 7 8 . So far, most studies have been focused on the unintentionally doped Si NCs materials, and only a few works have been concerned with the impurity doping in Si NCs though it is a fundamental issue to develop the high performance Si NCs-based devices.…”

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers

“…Nanocrystalline Si (nc-Si) materials have been extensively studied because of their novel properties and their potential applications in future electronic and optoelectronic devices [ 1 , 2 ]. For example, the SiO 2 /nc-Si/SiO 2 sandwiched structures can be used as a floating gate to develop the non-volatile memories [ 3 ]. It has also been reported that nc-Si-based materials can be potentially used in light-emitting devices as well as next generation solar cells [ 4 – 6 ].…”

The Change of Electronic Transport Behaviors by P and B Doping in Nano-Crystalline Silicon Films with Very High Conductivities

“…Nano-crystalline Si (nc-Si) films have attracted much attention since they can be used in many kinds of devices such as Si-based light emitters, thin-film solar cells, as well as nonvolatile memories [ 1 , 2 , 3 , 4 , 5 , 6 ]. For example, highly efficient electroluminescence devices based on nc-Si have been fabricated and the external quantum efficiency reaches as high as 1.1% [ 3 ].…”