Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodes

Bernstein, S.; Wong, Thomas; Kisler, Yanina; Tustison, Randal W.

doi:10.1557/jmr.1993.0012

Cited by 158 publications

(34 citation statements)

References 7 publications

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“…4 6. ͑a͒ Model and ͑b͒ equivalent circuit to describe charge injection into a near-electrode region of a ferroelectric thin-film capacitor.…”

Section: Injection Modelmentioning

confidence: 99%

“…Several groups reported on the growth and crystallographic characterization of ferroelectric thin films in combination with a variety of oxidic electrode materials. [5][6][7] Ramesh et al 8 9 Important questions remain as to the nature of the electrode-ferroelectric interface. For example, it is unclear if the near-electrode material is ferroelectric and if charge injection is of importance.…”

Section: Introductionmentioning

confidence: 99%

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Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Cillessen¹,

Prins²,

Wolf³

1997

Journal of Applied Physics

164

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Thin-film ferroelectric capacitors consisting of PbZr 0.53 Ti 0.47 O 3 sandwiched between La 0.5 Sr 0.5 CoO 3 electrodes have been deposited using pulsed laser deposition. The combination of oxidic perovskite-type materials results in capacitors with a coercive field (E c ) which is comparable with values for bulk ceramics. Textured thin-film capacitors with a columnar microstructure show lower switching voltages than epitaxial films. No thickness dependence of E c and a good endurance up to 10 11 cycles have been observed for epitaxial as well as textured capacitors with oxidic electrodes. In contrast, capacitors with a metallic top electrode show an increase of E c with decreasing thickness of the ferroelectric layer. We show that charge injection can explain the experimentally observed increase of E c with decreasing ferroelectric layer thickness. An overview is given of the growth conditions needed for PbZr 0.53 Ti 0.47 O 3 films, because the precise stoichiometry is of the utmost importance for the capacitor quality.

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“…4 6. ͑a͒ Model and ͑b͒ equivalent circuit to describe charge injection into a near-electrode region of a ferroelectric thin-film capacitor.…”

Section: Injection Modelmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Cillessen¹,

Prins²,

Wolf³

1997

Journal of Applied Physics

164

View full text Add to dashboard Cite

show abstract

“…Currently, various electrode materials, ranging from polycrystalline metal films to complex conducting oxides, are being studied [3][4][5]. Problems relating to the preparation of different electrode materials (Pt, Pt/Ti, RuO 2 , ReO 3 , CoSi 2 ,/Si 3 N 4 ) and their compatibility with ferroelectric lead zirconate titanate (PZT) thin films were reviewed by Hren et al [6].…”

Section: Introductionmentioning

confidence: 99%

“…Lately several degradation phenomena such as poor adhesion, degradation of ferroelectric thin film properties such as aging and fatigue, hillock growth, and diffusion of lead though platinum has been observed when ferroelectric lead zirconate titanate thin (PZT) films are interfaced with Pt/Ti bilayers [4,6]. The morphology and orientation of ferroelectric thin films is also influenced by the underlying Pt/Ti metallization [11,12].…”

Section: Introductionmentioning

confidence: 99%

Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

Sreenivas

Reaney

Maeder

et al. 1994

Journal of Applied Physics

274

114

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The stabilities of Pt/Ti bilayer metallizations in an oxidizing atmosphere have been investigated with several thicknesses of interfacial Ti-bonding layers. Reactions in the Pt/Ti/SiO 2 /Si interface were examined as a function of various annealing conditions in the temperature range 200-800°C by using Rutherford backscattering spectrometry, Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy. Thermal treatment in oxygen was found to cause rapid oxidation of the Ti layer, accompanied by the migration of Ti into the Pt film. Diffusion of oxygen through the Pt grain boundaries was mainly responsible for the adverse reactions at the interface and loss of mechanical integrity. Thin Ti (10 nm) layers resulted in the depletion of the interfacial bonding layer causing serious adhesion problems, whereas thicker Ti films (100 nm) caused the formation of TiO 2-x in the Pt-grain boundaries, ultimately encapsulating the Pt surface with an insulating TiO 2 layer. Improved stability and adhesion in the Pt/Ti bilayer metallization compatible with ferroelectric thin film processing, were achieved by incorporating well reacted thin TiO 2 , layers in situ, and depositing Pt films at a high temperature.

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“…A 1-µm-thick film was deposited on the Pt bottom electrode. In the growth of the PZT films, the source precursors used were Pb(DMAMP) 2 : 0.025 CCM, Zr(MMP) 4 : 0.025 CCM, and T(MMP) 4 : 0.025 CCM, and the total pressure was 1067 Pa. Oxygen (O 2 ) and argon (Ar) were used as the oxidizing gas and carrier gas, respectively.…”

Section: Experiments Preparation Of Filmsmentioning

confidence: 99%

Influence of the Top Metal Electrode on P-V Hysteresis Loops Behavior of 1-μm Thick PZT Films Deposited on a Pt/TiN/Si Substrate Prepared by MOCVD

Masruroh

Umeda²,

Takada

2013

AMM

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Abstract. The effect of various top electrodes (Au, Ag, Cu and Al) on the hysteresis loop behavior of 1-µm thick PZT has been investigated. The PZT films and PT bottom electrode were prepared by MOCVD, and various top electrodes were deposited by evaporation. Using an Ag and Cu top electrode, an improvement in the polarization hysteresis loops of PZT films was observed compared to the other electrodes (Au and Al). A well-saturated P-V hysteresis loop was obtained when Ag and Cu top electrodes were applied. By applying an Au electrode, a decrease in polarization was observed, and the Al top electrode produced P-V hysteresis loops with para-electric behavior. The improvement in the polarization hysteresis loops was affected by the electrical conductivity of the top metal electrode. Namely, a faster supply of compensation charges, which are required to bind polarization charges located near the interface in PZT films, was obtained as the conductivity of the top electrode increased. The electrical conductivity of the metals displayed the following trend: (Ag>Cu>Au>Al).

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Fatigue of ferroelectric PbZr_xTi_yO₃ capacitors with Ru and RuO_x electrodes

Cited by 158 publications

References 7 publications

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Thickness dependence of the switching voltage in all-oxide ferroelectric thin-film capacitors prepared by pulsed laser deposition

Investigation of Pt/Ti bilayer metallization on silicon for ferroelectric thin film integration

Influence of the Top Metal Electrode on P-V Hysteresis Loops Behavior of 1-μm Thick PZT Films Deposited on a Pt/TiN/Si Substrate Prepared by MOCVD

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